Vishay Launches Low Profile PowerPAK 600 V EF Series Fast Body Diode MOSFET

     Vishay announced the introduction of a new fourth generation 600 V EF series fast body diode MOSFET -- SiHK045N60EF, which uses a thin PowerPAK 10 x 12 package. The on resistance of Vishay Siliconix n-channel SiHK045N60EF is 29% lower than that of the previous generation devices. It provides an efficient and high power density solution for communication, industrial and computing applications. At the same time, the grid charge is reduced by 60%, so that the product of the on resistance of the device and the grid charge, that is, the important coefficient of merit (FOM) of 600 V MOSFETs in power conversion applications is at a new low in the entrepreneurial world.

     Vishay provides rich MOSFET technology to support power conversion at all levels, covering various high-tech systems from high-voltage input to low-voltage output. With the launch of SiHK045N60EF and the release of other fourth generation 600 V EF series devices, Vishay can meet the requirements of the first two levels of power system architecture to improve energy efficiency and power density, including totem pole bridgeless power factor correction (PFC) and subsequent DC/DC converter modules. Typical applications include edge computing and data storage, uninterruptible power supply, high intensity discharge (HID) lamp and fluorescent lamp ballast lighting, solar inverter, welding equipment, induction heating, motor drive and battery charger.

     SiHK045N60EF is based on Vishay energy-efficient E-series super junction technology. Under 10 V, the typical on resistance is only 0.045 Ω, 27% lower than PowerPak 8 x 8 packaged devices, which improves the rated power and supports various applications ≥ 3 kW. At the same time, the device height is as low as 2.3 mm, which increases the power density. In addition, the ultra-low gate charge of MOSFET is reduced to 70 nC. The FOM of the device is 3.15 Ω  nC, 2.27% lower than that of the closest MOSFET competitor in the same category. These parameters indicate that the conduction and switching losses are reduced, thereby saving energy and improving energy efficiency. The device can meet the special requirements for the titanium efficiency of the server power supply, or the peak efficiency of the communication power supply can reach 98%.

     The effective output capacitors Co (er) and Co (tr) of SiHK045N60EF are only 171 pf and 1069 pF respectively, which can improve the switching performance of zero voltage switching (ZVS) topology, such as LLC resonant converter. Co (tr) of the device is 8.79% lower than that of the closest MOSFET competitor in the same class, while Qrr of its fast body diode is as low as 0.8 μ C. It is helpful to improve the reliability of bridge topology. In addition, the PowerPAK 10 x 12 package of MOSFETs has excellent thermal performance of any surface mount, with a maximum junction shell thermal resistance rating of 0.45 ° C/W. SiHK045N60EF thermal impedance is 31% lower than PowerPAK 8 x 8 package device.