Vishay has introduced a new 30V n-channel MOSFET half-bridge power stage module

     Vishay Intertechnology introduces a new 30 V N-channel MOSFET half-bridge power stage This power stage combines high-end TrenchFET MOSFETs and low-end SkyFET MOSFETs with Schottky diodes in a compact PowerPAIR 3.3mm x 3.3mm package. For power conversion in computing and telecommunications applications, the Vishay Siliconix SiZF300DT offers higher power density and efficiency while reducing the number of components and simplifying the design.

     The two MOSFETs in the device are internally connected in a half-bridge configuration. Channel 1 MOSFETs have a maximum on-resistance of 4.5mΩ at 10 V and 7.0mΩ at 4.5 V. The on-resistance of the channel 2 MOSFET is 1.84mΩ at 10 V and 2.57mΩ at 4.5 V. The on-resistance is typical for MOSFET. 6.9 nC and 19.4 nC, respectively. The SiZF300DT is 100% Rg and UIS tested, RoHS compliant and halogen-free.

     Compared to the SiZF300DT in a 6mm x 5mm package with similar on-resistors, the dual-chip device is 65% smaller, making it one of the most compact integrated products on the market. The device provides designers with a space-saving solution for point-of-load (POL) conversion, power supply as well as synchronous buck and DC/DC converters in graphics and acceleration cards, computers, servers, and telecommunications and RF networking equipment.

     Dual MOSFETs have a unique pin configuration and construction that delivers up to 11% more output current per current phase than competing products with the same footprint. In addition, the efficiency is higher when the output current exceeds 20 A. The device's pin configuration and large PGND pads also enhance heat transfer, optimize electrical paths, and simplify PCB layout.