Vishay has introduced the latest fourth-generation 600 V E series MOSFET devices, RDS(ON)*Qg FOM is only 2.8Ω *nC, reaching the industry's advanced level

     Vishay Intertechnology, Inc. announces the launch of the latest fourth generation 600 V E series power MOSFET device -SiHK045N60E. Vishay Siliconix N-channel SiHK045N60E offers an efficient solution for communication, server and data center power applications with a 60% reduction in gate charge, with a 27% lower on-resistance than the previous generation 600 V E series MOSFETs. In this way, the gate charge and on-resistance product can reach the industry advanced level in similar devices. This parameter is the key index (FOM) of 600 V MOSFET in power conversion applications.

     Vishay's rich MOSFET technology fully supports the power conversion process, covering a wide range of new electronic systems requiring high voltage input to low voltage output. With the introduction of the SiHK045N60E and the upcoming release of the fourth generation 600 V E series, the company is able to meet the requirements for improved energy efficiency and power density -- including power factor correction and hard-switching AC/DC converter topologies -- at the early stage of power system architecture design.

     The SiHK045N60E uses Vishay's latest energy-efficient E series super-junction technology, with a typical on-resistance of just 0.043 Ω at 10 V and an ultra-low gate charge down to 65 nC. The FOM of the device is 2.8Ω *nC, which is 3.4 % lower than that of similar MOSFET competitors. SiHK045N60E has an effective output capacitance Co(er) of 117 pF, which helps to improve switching performance. These performance parameters mean reduced conduction and switching losses, resulting in energy savings. The thermal resistance RthJC of SiHK045N60E crust is 0.45C /W, which is 11.8% lower than that of its competitors and has better thermal performance.

     The device is ROHS-compliant and halogen-free in PowerPAK 10x12 package, withholds overvoltage transients in avalanche mode, and guarantees a UIS test pass of 100% of the limit value.