Vishay introduces new 200V n-channel MOSFETs

     Vishay Intertechnology today announced the introduction of a new 200V n-channel MOSFET-SISS94DN in a heat-enhanced 3.3mm x 3.3mm PowerPAK 1212-8S package. Typical on-resistance at 10 V is the lowest in the industry at 61 mΩ. At the same time, the product of the improved on-resistance and gate charge, that is, the MOSFET switch application important value coefficient (FOM) is 854 mΩ*nC. The space-saving Vishay Siliconix SiSS94DN is specifically designed to increase power density and reduce the occupancy area by 65 percent compared to devices with similar on-resistors in 6mm x 5mm packages.

     TrenchFET fourth generation power MOSFET typical on-resistance is 20% lower than the second best product on the market and FOM is 17% lower than the previous generation solution. These metrics reduce on-off and on-off losses, thereby saving energy. Compact and flexible devices allow designers to replace large MOSFETs with the same on-loss, saving PCB space, or MOSFETs of similar size with high on-loss.

     SiSS94DN is suitable for isolated DC/DC topology primary side switches and synchronous rectification, including communication equipment, computer peripherals, consumer electronics; Laptop, LED TV, vehicle and ship LED backlight; As well as GPS, factory automation and industrial applications motor drive control, load switching and power conversion.