Vishay introduces nine energy-efficient and high-precision smart power modules in the Siliconix SiC8xx series

     Vishay Intertechnology has announced the launch of nine new 70 A, 80 A and 100 A VRPower smart power modules in a heat-enhanced 5 mm x 6 mm PowerPAK MLP56-39 package with integrated current and temperature monitoring. Vishay Siliconix SiC8xx Series smart power modules improve energy efficiency and current reporting accuracy, reducing energy costs in data centers and other high-performance computing, as well as 5G mobile infrastructure communications applications.

     The power module contains a power MOSFET and an advanced driver IC. To improve energy efficiency, the device's internal MOSFETs are powered by advanced TrenchFET Gen IV technology, which sets the industry benchmark for performance and significantly reduces switching and conduction losses. The peak energy efficiency of SiC8xx intelligent power module can reach more than 93% under various application conditions. Diode emulation mode can be enabled at light loads to improve efficiency across the full load range.

     The solution that uses inductor DCR to monitor power consumption has a current reporting accuracy of 7%, while the SiC8xx family of devices uses low-side MOSFETs for detection with an accuracy error of less than 3%. Thus helping to improve Intel, Advanced Micro Devices, Inc. And companies such as Nvidia Corporation for high-current processor and system-on-chip (SoC) performance, improved thermal management. The device is suitable for synchronous buck converters, polyphase VRD for CUP and GPU, memory, and DC/DC VR modules.

     The SiC8xx power module has input voltages from 4.5V to 21V (as shown in the table) and switching frequencies up to 2MHz. Fail-safe features include short-circuit and overcurrent alarms for high-side MOSFETs, overheat protection, and undervoltage lock (UVLO). The SiC8xx series supports 3.3V and 5V three-state PWM logic levels and is compatible with various PWM controllers.