Vishay introduces the AEC-Q101 compliant N-channel 60 V MOSFETs

     Vishay has introduced an AEC-Q101-certified N-channel 60 V MOSFET, the industry's first such device in the PowerPAK SO-8L dual asymmetric package. The new Vishay Siliconix SQJ264EP is designed to meet the need to save space and improve the efficiency of DC/DC switching mode power supplies for automotive applications. The new device integrates high - and low-side MOSFETs in a compact 5mm x 6mm occupancy area with a maximum on-resistance of as low as 8.6mW on the low side.

     Compared to non-MOSFET solutions, the automotion-grade device announced today reduces component count and board space requirements by co-packaging two TrenchFET MOSFETs in an asymmetric package, while increasing power density. In addition, its optimized cored size control (high-end) and synchronous (low-end) MOSFETs are more efficient than symmetric dual devices in power conversions with duty cycles of less than 50%.

     The SQJ264EP's channel 1 MOSFETs have a maximum on-resistance of 20 mW at 10 V and a typical gate charge of 9.2 nC, while the channel 2 MOSFETs provide an on-resistance of 8.6 mW at 10 V and a typical gate charge of 19.2 nC. With no internally connected switching nodes, the SQJ264EP gives designers the flexibility to configure transistors to different topologies, including synchronous buck or synchronous boost DC/DC converters.

     By operating at high temperatures of +175°C, the dual MOSFETs provide the robustness and reliability required for infotainment systems, displays, LED lighting, and automotive applications such as electric bicycles. In addition, the SQJ264EP's gull-shaped leads provide better solder flow, enhanced automatic optical inspection (AOI) capabilities, and higher board-level reliability at the foot of the lead compared to the QFN single and dual packages.