Vishay introduces the industry's lowest on-resistance -30 V P channel MOSFETs

     Vishay Intertechnology announced the debut of the -30 V p channel power MOSFET-SIRA99DP, with on-resistance down to 1.7m at 10 V. The Vishay Siliconix TrenchFET 4th generation SiRA99DP has the lowest on-resistance in the industry and comes in a thermally-enhanced 6.15mm x 5.15mm PowerPAK SO 8 monocoque package specifically designed for increased power density.

     This MOSFET is RG and UIS tested, RoHS compliant and halogen-free. The MOSFET on-resistance is 43% lower than the number two product on the market, reducing voltage drop and reducing conduction losses for higher power density. SiRA99DP ultra-low gate charge is only 84 nC, gate charge and on-resistance product, that is, the important optimization coefficient (FOM) of MOSFET in switching applications is 185 m*nC, reaching the best level of similar products.

     The device is ideal for input voltage 12 V circuits for adapters, batteries and universal power switches, reverse polarity battery protection, OR-ing functions, and motor drive control for telecommunications equipment, servers, industrial PCS, and robots. The SiRA99DP reduces the number of parallel devices, in other words, increases the current of a single device, thereby increasing the power density and saving motherboard space for these applications. In addition, as a P-channel MOSFET, the device does not require a charge pump to provide the forward gate voltage required for an n-channel device.