Vishay introduces the world's leading automotive grade 80 V P channel MOSFETs

     Vishay introduces the AEC-Q101 certified, world-leading P-channel 80 V TrenchFET MOSFET-SQJA81EP. The new Vishay Siliconix SQJA81EP on-resistance achieves the highest level of 80 V p channel devices, improving power density and energy efficiency in automotive applications. The SQJA81EP comes in a Eurowing lead structure 5.13 mm x 6.15 mm PowerPAK SO-8L small monocoque package with a maximum on-resistance of only 17.3 mW at 10 V/a typical value of 14.3 mW.

     The recently released auto-grade MOSFET on-resistance is 28 percent lower than the closest DPAK packaged competitor, 31 percent lower than previous solutions, and 50 percent smaller footprint, helping to reduce on-power consumption and save energy while increasing power density to improve output. SQJA81EP has an excellent gate charge of only 52 nC at 10 V, reducing the gate drive loss, the gate charge multiplied by the on-resistance, that is, the MOSFET coefficient of Excellence (FOM) for power conversion applications reaches the industry's outstanding level.

     Operating at +175 °C, the device meets the robustness and reliability requirements of automotive applications such as reverse polarity protection, battery management, high-side load switching and LED lighting. In addition, the SQJA81EP Gull-wing lead construction helps improve automatic optical inspection (AOI) function, eliminates mechanical stress, and improves board level reliability.

     The device's 80 V rated voltage meets the safety margin required for a variety of commonly used input voltage rails for 12 V, 24 V, and 48 V systems. Mosfets increase power density, which reduces the number of components that need to be connected in parallel, saving PCB space. In addition, as a P-channel device, SQJA81EP simplifies gate drive design without the need to configure the charge pump required for n-channel devices. Mosfets are in lead-free (Pb) packages, halogen-free, RoHS compliant, and 100% Rg and UIS tested.