Vishay launched an advanced 30 V n channel MOSFET

     Vishay Intertechnology, Inc. launched a multi-functional new model 30 V N-channel TrenchFet® fifth-generation power MOSFET --- SISS52DN to improve the power density and energy efficiency of non-isolation topology structure. Vishay Siliconix SISS52DN uses armal enhanced 3.3 mm x 3.3 mm PowerPak 1212-8s packaging, and the conduct resistance is only 0.95 mW under 10 V conditions, 5 %lower than the previous generation of products. In addition, the device drive resistance under 4.5 V conditions is 1.5 mW, while the 4.5 V conditions are conducted with the pilot and grid charge product, that is, the important super value coefficient (FOM) of the MOSFET switch is 29.8 MW*NC, which is the superior value in the market One of the products with the lowest coefficient.

     The FOM of SISS52DN is 29 %lower than the previous generation device, thereby reducing leading and switching loss and saving power conversion applications.SISS52DN is suitable for synchronous rectification, synchronous antihypertensive converter, DC/DC converter, switching cabinet topology structure, or-character fET low-edge switch, as well as load switching of server, communication and RF equipment power supply. MOSFET can improve the performance of isolation and non -isolation topology, and simplify the choice of devices of the two circuits of the designer.The device is tested by 100 % RG and UIS, which meets the ROHS standard without halogen.