Vishay offers PowerPAK 8x8L packaged in 60 V and 80 V N-channel MOSFETs with excellent RDS(ON) on-resistance as low as 0.65m

     Vishay Intertechnology, Inc. announced the launch of two N-channel TrenchFET MOSFETs --60 V SiJH600E and 80 V SiJH800E -- to improve power density, energy efficiency and board-level reliability for communications and industrial applications. To achieve the design objectives, the 60 V SiJH600E and 80 V SiJH800E feature ultra-low on-resistance, operating temperature up to +175 °C and high continuous drain current. The space-saving PowerPAK 8x8L package uses a leadless bonding gull-wing lead structure to eliminate mechanical stress and help improve board-level reliability.

     The ultra-low on-resistance of SiJH600E and SiJH800E -- the typical value at 10 V is 0.65mW and 1.22mW, respectively -- is 54% and 52%lower than that of the same-generation PowerPAK SO-8 package, which reduces the conduction power consumption and realizes the effect of energy saving.

     In order to improve the power density, the continuous drain current of SiJH600E and SiJH800E is 373 A and 288 A respectively, and the footprint area of the package is 60% less than that of the D2PAK package, and the height is 57% less. To save circuit board space, each MOSFET can also be used to replace two parallel PowerPAK SO-8 devices.

     The Vishay Siliconix device has a working temperature of+175 ° C, stable and reliable performance, and is suitable for synchronous rectification of power supply, motor drive control, battery management, electric tools and other applications. The device is lead-free (Pb) package, halogen free, RoHS compliant, and has passed 100% Rg and UIS tests.