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Vishay unveils 7th Generation 1200V FRED Pt Hyperfast Recovery rectifier

Jan 19 2023 2023-01 Semiconductors Vishay
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Vishay Intertechnology announced the launch of two new seventh generation 1200 V FRED Pt Hyperfast recovery rectifier-VS E7MH0112-M3 and VS-E7MH0112HM3. The two 1A rectifiers are packaged with SMA (DO-214AC), and the reverse recovery charge (Qrr) and forward voltage drop reach the advanced level of similar devices.

     Vishay Intertechnology announced to launch two new seventh generation 1200 V FRED Pt Hyperfast recovery rectifier - VS  E7MH0112 - M3 and V - E7MH0112HM3. These two 1 A rectifiers are packaged in SMA (DO-214AC) package, with reverse recovery charge (Qrr) and forward voltage drop reaching the advanced level of similar devices. Vishay Semiconductors VS  E7MH0112 - M3 and after AEC - Q101 certification of v - E7MH0112HM3 available to optimize the industrial and automotive applications, improve the AC/DC and DC/DC converter auxiliary function and efficiency of low power level

 

     The rectifier has a fast recovery time of 75 ns and a typical Qrr as low as 150 nC. The typical forward voltage drop of the device is 1.10V, 10% lower than that of rival products in the market, and the parasitic capacitance is reduced by 50%, without affecting the reliability of the device. In addition, the rectifier reverse recovery energy (Erec) increases by 10% compared to the previous generation solution, and soft recovery helps reduce EMI.

 

     The device can be used as a clamping, buffering, and continuing diode for flyback auxiliary power supplies, as well as a high-frequency rectifier for bootstrapping drive functions, while providing desaturation protection for the latest fast switching IGBTs and Si/SiC MosFeTs. Typical applications of VS-E7MH0112-M3 and automotive VS-E7MH0112HM3 include industrial and communications equipment, electric vehicle (EV) on-board chargers and motors, as well as <s:1> uk converters and industrial LED PFC CrM SEPIC circuits.

 

     VS-E7MH0112-M3 and VS-E7MH0112HM3 use flat structures and platinum doping lifetime control to ensure system reliability and stability without affecting performance, while optimized storage charge and low recovery current minimize switching losses and reduce power consumption. The device is RoHS-compliant, halogen-free, moisture sensitive to J-STD-020 Level 1, and operates at +175 °C.

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