DC-DC converters are vital components in both electric vehicles (EVs) and hybrid vehicles, serving as the critical link between high-voltage batteries and low-voltage auxiliary circuits. These circuits power essential systems, including 12 V headlights, interior lighting, wipers, window motors, and fans, as well as 48 V pumps, steering drives, lighting systems, electric heaters, and air conditioning compressors. Additionally, DC-DC converters play a crucial role in developing more cost-effective and energy-efficient vehicles with advanced low-voltage functionalities.
According to TechInsights1, the global market for automotive DC-DC converters reached $4 billion in 2023 and is projected to grow to $11 billion by 2030, with a compound annual growth rate (CAGR) of 15% during the forecast period.
Gallium Nitride (GaN) technology is key in this growth, particularly in enhancing the power density of DC-DC converters and onboard chargers (OBCs). Leading automotive drive technology and electrification solutions provider, Vitesco Technologies, has adopted GaN to improve the power efficiency of its Gen5+ GaN Air DC-DC converter.
Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) supplies the CoolGaN™ 650 V transistors that significantly boost overall system performance, reduce system costs, and increase usability. These transistors have enabled Vitesco Technologies to set new benchmarks in power density (efficiency exceeding 96%) and sustainability for DC-DC converters, power supplies, and OBCs.
GaN transistors offer substantial advantages in high-frequency switching applications, with switching speeds exceeding 250 kHz, up from 100 kHz. This results in minimal switching losses, even in hard-switching half-bridges, reducing thermal and overall system losses. Infineon's CoolGaN™ transistors, with high on/off speeds and top-side cooling TOLT packaging, eliminate the need for liquid cooling, further lowering system costs. The 650 V devices enhance power efficiency and density, supporting 800 V output power. Key specifications include a 50 mΩ on-state resistance (RDS(on)), a transient drain-to-source voltage of 850 V, and IDS,max and IDSmax,pulse ratings of 30 A and 60 A, respectively.
Johannes Schoiswohl, Senior Vice President and Head of GaN Systems at Infineon Technologies, stated, "We are thrilled to see industry leaders like Vitesco Technologies leveraging Infineon's GaN devices for continuous innovation, such as transitioning from liquid-cooled to air-cooled systems. The significant value of GaN lies in its ability to shift paradigms."
Using GaN transistors, Vitesco Technologies has developed the passively cooled Gen5+ GaN Air DC-DC converter, reducing overall system costs. GaN devices also simplify converter design and mechanical integration, allowing for flexible installation in vehicles and reducing manufacturers' workloads. The use of GaN transistors increases converter power to 3.6 kW and power density to over 4.2 kW/l.
Compared to the Gen5 liquid-cooled converter, the Gen5+ GaN Air DC-DC converter achieves over 96% efficiency and improved thermal performance. It delivers a two-phase output of 248 A at a continuous voltage of 14.5 V. The phases can be combined for maximum output power, or one phase can be deactivated under partial load conditions, with interleaved switching frequencies between the two phases. Additionally, by serially switching the input of two phases, converters based on CoolGaN™ 650 V power transistors can achieve an 800 V architecture without exceeding the semiconductor device's blocking voltage limit. This converter series also features an isolated half-bridge topology, including a GaN-based half-bridge, a fully isolated transformer, and an active rectifier for each phase.
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