Vitesco Technologies selected CoolGaN transistors from Infineon to improve the power efficiency of its Gen5+ GaN Air DCDC converter

     Vitesco Technologies, a provider of advanced drive technology and electrification solutions, has chosen GaN (Gallium Nitride) to enhance the power efficiency of its Gen5+ GaN Air DCDC converters. The CoolGaN Transistors 650 V manufactured by Infineon Technologies AG greatly enhance the overall performance of the system, while simultaneously reducing system cost and improving user-friendliness. Vitesco has developed a new generation of DCDC converters that have achieved exceptional power density (with an efficiency rating of over 96 percent) and have set new benchmarks for sustainability in power grids, power supply, and OBCs.

     The benefits of GaN-based transistors in high-frequency switching applications are significant, but the most crucial advantage is the enhanced switching speed, which has been raised from 100 kHz to over 250 kHz. This allows for extremely low switching losses, especially in hard-switched half-bridges, while minimizing thermal and overall system losses. Furthermore, Infineon’s CoolGaN Transistors exhibit exceptional turn-on and turn-off speeds and are enclosed in a top-cooled TOLT packaging. The devices are cooled by air, which eliminates the requirement for liquid cooling and thereby decreases the overall expenses of the system.

     The 650 V devices enhance power efficiency and density, allowing for an 800 V output. Furthermore, they possess a low ON-resistance (RDS(on)) of 50 mΩ, a high transient drain-to-source voltage of 850 V, They possess a low on -resistance (RDS(on)) of 50 Mω, a high transient drain-to-source voltage of 850 V, They possess a low on -resistance (RDS(on)) of 50 Mω, a high transient drain-to-source voltage of 850 V, They possess a low on -resistance (RDS(on)) of 50 m ω, a high transient drain-to-source voltage of 850 V, a maximum drain current (IDS, max) of 30 A, and a maximum drain current (IDS, max) of 60 A.

     Vitesco Technologies utilized GaN Transistors to develop their Gen5+ GaN Air DCDC converters, incorporating passive cooling to effectively lower the system’s total cost. The GaN devices facilitate streamlined converter design and mechanical integration. Consequently, the DCDC converters can be strategically placed in the vehicle, hence decreasing the burden on manufacturers. By utilizing GaN, the converters may be expanded to a power capacity of 3.6 kW and achieve a power density exceeding 4.2 kW/l.

     The Gen5+ GaN Air DCDC converter delivers over 96% efficiency and demonstrates enhanced thermal performance compared to the Gen5 liquid-cooled converter. Their output consists of two phases, providing 24a continuous current at a voltage of 14.5V. Phases can be integrated for maximum output power. However, it is also possible to deactivate one phase when operating below full capacity and switch the switching frequency alternately between the two phases.

     In addition, by exchanging two continuously phase inputs, a converter using a CoolGaN power transistor rated at 650 V can be used to build an 800 V structure without exceeding the device's maximum voltage blocking capability. The converter uses an isolated half-bridge topology that includes a GAN-based half-bridge, a fully isolated transformer, and an active rectifier unit in each phase.