Aug 9 2024
2024-08
Semiconductors
Vishay Siliconix
![Article Cover](/uploaded/images/article/a18b015d496045edbf47d82e2204190d.jpg)
What Is the IRFP460?
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The IRFP460 is a high-performance third-generation Power MOSFET from Vishay.
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It operates using PowerMESH™II technology, which enhances its switching speed, low on-resistance, and overall ruggedness.
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The MOSFET is housed in a TO-247 package.
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The IRFP460 functions by varying the gate voltage to control the flow of electrical current between its drain and source terminals.
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The IRFP460 enables efficient switching and amplification of power, making it suitable for high-power electronic circuits.
Pinout of IRFP460
Gate (G): This pin controls the MOSFET's switching operation. Applying a voltage to the gate pin allows the MOSFET to turn on, enabling current flow between the drain and source.
Drain (D): This is the main current-carrying pin. The drain is connected to the load or the high-voltage side of the circuit. Current flows from the drain to the source when the MOSFET is turned on.
Source (S): This pin is connected to the ground or the low-voltage side of the circuit. The source pin is where the current exits the MOSFET after passing through the drain.
Circuit of IRFP460
The circuit involving the IRFP460 MOSFET primarily revolves around its role as a high-power switch in various applications. In a typical circuit, the MOSFET's gate is connected to a control signal, which modulates the switching operation. When a voltage is applied to the gate, it creates an electric field that allows current to flow between the drain and source terminals, thus turning the MOSFET on.
In a standard configuration, the source pin is connected to ground, the drain is connected to the load, and the gate is driven by a control signal or driver circuit. As current flows from the drain to the source, the MOSFET's low on-resistance minimizes power loss.
Specification of IRFP460
Maximum Drain-Source Voltage: 500 V
Continuous Drain Current: 20 A
Pulsed Drain Current: 80 A
Gate-Source Voltage: ±20 V
Maximum Power Dissipation: 94 W
Gate-Source Threshold Voltage: 4.0 to 6.0 V
On-State Resistance (Rds(on)): 0.35 Ω
Total Gate Charge: 140 nC
Rise Time: 150 ns
Fall Time: 120 ns
Package Type: TO-247
Features of IRFP460
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Dynamic dV/dt rating
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Repetitive avalanche rated
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Isolated central mounting hole
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Typical RDS(on) = 0.22Ω
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100% avalanche tested
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New high voltage benchmark
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Gate charge minimized
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Fast switching
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Ease of paralleling
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Simple driving requirements
Applications
Switch Mode Low Power Supplies (SMPS)
High current, high speed switching
DC-AC converters for welding
Equipment and uninterruptible power supplies
motor drives
Where to Use IRFP460?
The IRFP460 is commonly used in high-power switching applications where robust performance and efficiency are critical. Its high voltage rating and substantial current handling capability make it apply to power inverters, motor drives, power amplifiers, and more. It is particularly well-suited for circuits that require fast switching and low on-resistance to minimize power losses and improve overall system efficiency.
Additionally, the IRFP460 is also a good choice for industrial and commercial applications, including power supplies, automotive electronics, and other environments where reliable.
How to Choose IRFP460?
When choosing the IRFP460, several key factors must be considered. First, verify that its voltage rating of 500 V and current rating of 20 A align with the requirements of your circuit. Assess the power dissipation capabilities and thermal management needs and then evaluate the switching speed and on-resistance. Additionally, consider the package type (TO-247). Finally, confirm that the MOSFET's ruggedness and reliability meet the demands of your specific application environment.
How to Use IRFP460?
To use the IRFP460, first, carefully insert the MOSFET into the appropriate TO-247 package slot on your PCB. Next, connect the gate, drain, and source pins according to your circuit requirements. Following this, apply the gate voltage to control the switching of the MOSFET. Then verify that the drain-source voltage does not exceed the MOSFET's maximum rating during operation. Additionally, monitor the temperature of the MOSFET to prevent overheating, and make necessary adjustments to your cooling system if needed. Finally, test the circuit to confirm that the MOSFET operates correctly under the expected load conditions.
FAQs
What are the key specifications of the IRFP460?
The IRFP460 has a maximum drain-source voltage of 500V, a continuous drain current of 20A, and a maximum gate-source voltage of ±20V.
Where is the IRFP460 commonly used?
The IRFP460 is often used in high-power switching applications, including motor drives, power supplies, and DC-DC converters. It is suitable for use in circuits where high voltage and current are required, such as in industrial and automotive systems.
How does the IRFP460 work?
The IRFP460 operates by applying a voltage to its gate, which creates an electric field that allows current to flow between the drain and source terminals. This switching capability is used to control the flow of power in various applications.
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