X-FAB introduces next-generation XbloX platform to advance SiC power MOSFET technology

     X-FAB Silicon Foundries SE has introduced XSICM03, its next-generation XbloX platform that enhances silicon carbide (SiC) process technology for power MOSFETs. This advance significantly reduces cell spacing, promotes a higher number of chips per wafer, and enhances on-state resistance while maintaining reliability.

     XbloX is X-FAB's optimized business process and technology platform designed to accelerate the advancement of complex SiC MOSFET technology. It integrates advanced SiC process development components and modules for flat MOSFET manufacturing, simplifying onboarding procedures and significantly reducing design hazards and product development time.

     By integrating established process modules with rigorous design regulations, control plans, and failure mode and impact analysis (fmea), XbloX accelerates prototyping, simplifies design evaluation, and reduces time to market. This process provides customers with a competitive advantage, enabling designers to build diverse product portfolios while meeting manufacturing timelines up to nine months faster than traditional development techniques.

     This next-generation platform helps reduce the size of the active zone design unit while maintaining full process control, as well as the performance of leakage and breakdown devices. The XSICM03 platform has stringent design requirements that enable customers to manufacture SiC flat MOSFETs with more than 25% reduction in cell spacing compared to the previous generation.

     This enhancement increases the number of chips per wafer by up to 30% compared to the previous generation. Using established process modules, the platform guarantees excellent grid oxide reliability and equipment durability. The enhanced PCM library and improved design support facilitate rapid customer takeout, which accelerates product development.