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X-FAB introduces the latest generation of avalanche photodiodes and single-photon avalanche diode devices

Apr 21 2021 2021-04 Power XSens Technologies BV
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X-FAB Silicon Foundries today announced the launch of the latest generation of avalanche photodiode (APD) and single photon avalanche diode (SPAD) devices. X-FAB's new APD and SPAD use its proven and automotive certified 180nm XH018 high-pressure process

     X-FAB Silicon Foundries today announced the launch of the latest generation of avalanche photodiode (APD) and single photon avalanche diode (SPAD) devices. X-FAB's new APD and SPAD use its proven and automotive certified 180nm XH018 high-pressure process. Thanks to innovative architectural improvements, its performance is significantly improved compared to the company's earlier devices (originally released in mid-2019), so it can be used in scenarios with extremely challenging light intensity. At the same time, the form factor and connection compatibility of the new device with the previous generation are preserved, ensuring a simple and convenient upgrade path without additional engineering work.

 

     One of the most obvious areas of performance improvement is photon detection probability (PDP). The PDP value of 405nm incident light is 42%, and the improvement of near infrared (NIR) frequency is further up to 150%. The PDP value of 850nm wavelength is 5%. In addition, the post-pulse probability is 0.9%, which is 70% lower than that of the first-generation device. The dark count rate (DCR) is only 13 times per second /µm², and the currently supported fill factor (percentage of active sensor surface area) has almost doubled to 33%. 

 

     Since breakdown voltage characteristics can vary from device to device, precise determination is required to ensure good performance of APD/SPAD. For this reason, X-FAB has a built-in trigger diode that enables accurate, real-time on-chip breakdown voltage detection without an external light source. The new product includes an active quenching circuit that accelerates recovery of the SPAD device, making it ready for further photon detection. Thanks to the flexibility of size (in terms of width and length), the new SPAD brings outstanding application adaptability. Complete device models for SPAD and APD devices guarantee first-time-right; The model also includes new built-in trigger diode behavior.

 

     "Thanks to enhanced PDP combined with highly competitive DCR levels, we bring to market an APD/SPAD solution with impressive signal integrity characteristics; This will allow our customers to directly benefit from applications such as computed tomography and fluorescence detection in the medical field, as well as ToF and LiDAR in industrial and automotive systems." "These advanced optoelectronic components are a valuable addition to the X-FAB design suite, broadening the selection of interoperable assets available in the XH018 process," said Detlef Sommer, business line manager, Optoelectronic Technologies, X-FAB.

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