X-FAB is the first to market with a 110nm BCD-on-SOI foundry solution

     Globally recognized excellence of analog/mixed-signal foundries X-ray FAB Silicon FoundriesBCD - on - SOI solution suppliers, hence improving the BCD - on - prominence in the field of SOI technology. The new XT011 BCD-on-SOI platform reflects the growing demand for higher digital integration and processing power in analog applications. It combines the attractive features of SOI and DTI so that high-density digital logic and analog capabilities can be more easily integrated into a single chip than traditional Bulk BCD processes.

     By moving to lower process nodes, X-FAB XT011 products achieve double the standard cell library density of its mature XT018 180-nm BCD-on-SOI semiconductor platform; For the implementation of SONOS embedded flash memory, the area is also reduced by 35% compared to XT018; In addition, the performance of ultra-low on-resistance (R(ds)on) high-voltage N-channel devices is another important feature (over 25% improvement over the XT018 process). The significantly enhanced thermal performance means that the challenges of high-current applications can be better addressed - something that is often expected of the Bulk BCD process.

     The new BCD-on-SOI technology is highly robust and meets the design requirements of AEC-Q100 Grade 0. Its operating temperature range is -40 ° C to 175 ° C, and it also shows high EMI resistance. With no parasitic bipolar effect, the risk of latching is completely eliminated, ensuring the highest degree of operational reliability.

     X-FAB offers a comprehensive process design suite (PDK) for the XT011 as well as a wide range of IP elements such as SRAM, ROM and SonOS-based flash memory and embedded EEPROM. As a result, customers will have all the means they need to achieve a "first time right" design, which will translate into a shorter time to market.

     The XT011 process is primarily targeted at next-generation in-vehicle applications that require higher levels of data processing power. In addition, it will provide a path to smaller geometric sizes for existing industrial and medical products.

     "X-FAB is already well known as the fabs of choice for BCD-on-SOI technology; Being the first fab to transition to 110 nm further highlights our unrivalled expertise in this area." Joerg Doblaski, X-FAB's chief Technology Officer, said, "With this next-generation vehicle scale process, we will provide our customers with the solid foundation they need to produce more complex and highly integrated intelligent simulation products."