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Datasheet | BSP315PL6327HTSA1 |
File Size | 83.79 KB |
Total Pages | 9 |
Manufacturer | Infineon Technologies |
Website | https://www.infineon.com |
Total Parts | This datasheet covers 3 part numbers |
Associated Parts | BSP315PL6327HTSA1, BSP315PE6327T, BSP315P-E6327 |
Description | MOSFET P-CH 60V 1.17A SOT-223, MOSFET P-CH 60V 1.17A SOT-223, MOSFET P-CH 60V 1.17A SOT-223 |
BSP315PL6327HTSA1 - Infineon Technologies
![BSP315PL6327HTSA1 Datasheet Page 1](http://media.oemstron.com/oemstron/datasheet/sm/bsp315pl6327htsa1-0001.jpg)
![BSP315PL6327HTSA1 Datasheet Page 2](http://media.oemstron.com/oemstron/datasheet/sm/bsp315pl6327htsa1-0002.jpg)
![BSP315PL6327HTSA1 Datasheet Page 3](http://media.oemstron.com/oemstron/datasheet/sm/bsp315pl6327htsa1-0003.jpg)
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![BSP315PL6327HTSA1 Datasheet Page 9](http://media.oemstron.com/oemstron/datasheet/sm/bsp315pl6327htsa1-0009.jpg)
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BSP315P-E6327 | Infineon Technologies | MOSFET P-CH 60V 1.17A SOT-223 | 398 More on Order |
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Manufacturer Infineon Technologies Series SIPMOS® FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 1.17A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 800mOhm @ 1.17A, 10V Vgs(th) (Max) @ Id 2V @ 160µA Gate Charge (Qg) (Max) @ Vgs 7.8nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 160pF @ 25V FET Feature - Power Dissipation (Max) 1.8W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-SOT223-4 Package / Case TO-261-4, TO-261AA |
Manufacturer Infineon Technologies Series SIPMOS® FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 1.17A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 800mOhm @ 1.17A, 10V Vgs(th) (Max) @ Id 2V @ 160µA Gate Charge (Qg) (Max) @ Vgs 7.8nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 160pF @ 25V FET Feature - Power Dissipation (Max) 1.8W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-SOT223-4 Package / Case TO-261-4, TO-261AA |
Manufacturer Infineon Technologies Series SIPMOS® FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 1.17A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 800mOhm @ 1.17A, 10V Vgs(th) (Max) @ Id 2V @ 160µA Gate Charge (Qg) (Max) @ Vgs 7.8nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 160pF @ 25V FET Feature - Power Dissipation (Max) 1.8W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-SOT223-4 Package / Case TO-261-4, TO-261AA |