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Part Number | BSP315PL6327HTSA1 |
OEMstron Part # | BSP315PL6327HTSA1 |
Manufacturer | Infineon Technologies |
Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
Description | MOSFET P-CH 60V 1.17A SOT-223 |
Lifecycle | Obsolete |
RoHS | No RoHS Information |
EDA/CAD Models | BSP315PL6327HTSA1 PCB Footprint and Symbol |
Warehouses | USA, Europe, China, Hong Kong SAR |
Estimated Delivery | Nov 24 - Nov 29 (Choose Expedited Shipping) |
Warranty | Up to 1 year [Limited-Warranty]* |
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BSP315PL6327HTSA1 Specifications
Part Number | BSP315PL6327HTSA1 | |
Brand | Infineon Technologies | |
Lifecycle | Obsolete | |
RoHS | No RoHS Information | |
Product Line | Semiconductors | |
Category | Transistors | |
Subcategory | FETs, MOSFETs - Single | |
Manufacturer | Infineon Technologies | |
Series | SIPMOS® | |
FET Type | P-Channel | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | 60V | |
Current - Continuous Drain (Id) @ 25°C | 1.17A (Ta) | |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
Rds On (Max) @ Id, Vgs | 800mOhm @ 1.17A, 10V | |
Vgs(th) (Max) @ Id | 2V @ 160µA | |
Gate Charge (Qg) (Max) @ Vgs | 7.8nC @ 10V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 160pF @ 25V | |
FET Feature | - | |
Power Dissipation (Max) | 1.8W (Ta) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Supplier Device Package | PG-SOT223-4 | |
Package / Case | TO-261-4, TO-261AA |
BSP315PL6327HTSA1 Documents
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Part Number | Description | Stock |
BSP315PL6327HTSA1 D# 2156-BSP315PL6327HTSA1-ITTR-ND Rochester Electronics LLC |
MOSFET P-CH 60V 1.17A SOT223-4 |
Limited Supply - Call |
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