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| Datasheet | FQA6N80_F109 |
| File Size | 799 KB |
| Total Pages | 8 |
| Manufacturer | ON Semiconductor |
| Website | http://www.onsemi.com/ |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | FQA6N80_F109 |
| Description | MOSFET N-CH 800V 6.3A TO-3P |
FQA6N80_F109 - ON Semiconductor
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FQA6N80_F109 | ON Semiconductor | MOSFET N-CH 800V 6.3A TO-3P | 236 More on Order |
URL Link
www.oemstron.com/datasheet/FQA6N80_F109
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Manufacturer ON Semiconductor Series QFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 800V Current - Continuous Drain (Id) @ 25°C 6.3A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 1.95Ohm @ 3.15A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 31nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 1500pF @ 25V FET Feature - Power Dissipation (Max) 185W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-3P Package / Case TO-3P-3, SC-65-3 |