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Part Number | FQA6N80_F109 |
OEMstron Part # | FQA6N80_F109 |
Manufacturer | ON Semiconductor |
Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
Description | MOSFET N-CH 800V 6.3A TO-3P |
Lifecycle | Obsolete |
RoHS | No RoHS Information |
EDA/CAD Models | FQA6N80_F109 PCB Footprint and Symbol |
Warehouses | USA, Europe, China, Hong Kong SAR |
Estimated Delivery | Nov 23 - Nov 28 (Choose Expedited Shipping) |
Warranty | Up to 1 year [Limited-Warranty]* |
Payment | |
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FQA6N80_F109 Specifications
Part Number | FQA6N80_F109 | |
Brand | ON Semiconductor | |
Lifecycle | Obsolete | |
RoHS | No RoHS Information | |
Product Line | Semiconductors | |
Category | Transistors | |
Subcategory | FETs, MOSFETs - Single | |
Manufacturer | ON Semiconductor | |
Series | QFET® | |
FET Type | N-Channel | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | 800V | |
Current - Continuous Drain (Id) @ 25°C | 6.3A (Tc) | |
Drive Voltage (Max Rds On, Min Rds On) | 10V | |
Rds On (Max) @ Id, Vgs | 1.95Ohm @ 3.15A, 10V | |
Vgs(th) (Max) @ Id | 5V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 31nC @ 10V | |
Vgs (Max) | ±30V | |
Input Capacitance (Ciss) (Max) @ Vds | 1500pF @ 25V | |
FET Feature | - | |
Power Dissipation (Max) | 185W (Tc) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | Through Hole | |
Supplier Device Package | TO-3P | |
Package / Case | TO-3P-3, SC-65-3 |
FQA6N80_F109 Documents
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Part Number | Description | Stock |
FQA6N80_F109 Fairchild Semiconductor Corporation |
MOSFET N-CH 800V 6.3A TO-3P |
Contact Us |
Part Number | Description | Stock |
FQA6N80_F109 D# FQA6N80_F109-ND ON Semiconductor |
MOSFET N-CH 800V 6.3A TO3P |
Limited Supply - Call |
Part Number | Description | Stock |
FQA6N80_F109 D# NS-FQA6N80_F109 Fairchild Semiconductor Corporation |
OEM/CM ONLY |
7638 |
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