Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | HN3C51F-GR(TE85L,F |
| File Size | 339.59 KB |
| Total Pages | 4 |
| Manufacturer | Toshiba Semiconductor and Storage |
| Website | http://www.toshiba.com/taec/ |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | HN3C51F-GR(TE85L,F, HN3C51F-BL(TE85L,F |
| Description | TRANS 2NPN 120V 0.1A SM6, TRANS 2NPN 120V 0.1A SM6 |
HN3C51F-GR(TE85L,F - Toshiba Semiconductor and Storage
The Products You May Be Interested In
 |
HN3C51F-GR(TE85L,F | Toshiba Semiconductor and Storage | TRANS 2NPN 120V 0.1A SM6 | 352 More on Order |
 |
HN3C51F-BL(TE85L,F | Toshiba Semiconductor and Storage | TRANS 2NPN 120V 0.1A SM6 | 155 More on Order |
URL Link
|
Manufacturer Toshiba Semiconductor and Storage Series - Transistor Type 2 NPN (Dual) Current - Collector (Ic) (Max) 100mA Voltage - Collector Emitter Breakdown (Max) 120V Vce Saturation (Max) @ Ib, Ic 300mV @ 1mA, 10mA Current - Collector Cutoff (Max) 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA, 6V Power - Max 300mW Frequency - Transition 100MHz Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case SC-74, SOT-457 Supplier Device Package SM6 |
Manufacturer Toshiba Semiconductor and Storage Series - Transistor Type 2 NPN (Dual) Current - Collector (Ic) (Max) 100mA Voltage - Collector Emitter Breakdown (Max) 120V Vce Saturation (Max) @ Ib, Ic 300mV @ 1mA, 10mA Current - Collector Cutoff (Max) 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 350 @ 2mA, 6V Power - Max 300mW Frequency - Transition 100MHz Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case SC-74, SOT-457 Supplier Device Package SM6 |