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Part Number | HN3C51F-BL(TE85L,F |
OEMstron Part # | HN3C51F-BL-TE85L-F |
Manufacturer | Toshiba Semiconductor and Storage |
Category | Semiconductors › Transistors › Bipolar (BJT) - Arrays |
Description | TRANS 2NPN 120V 0.1A SM6 |
Lifecycle | Obsolete |
RoHS | No RoHS Information |
EDA/CAD Models | HN3C51F-BL(TE85L,F PCB Footprint and Symbol |
Warehouses | USA, Europe, China, Hong Kong SAR |
Estimated Delivery | Feb 3 - Feb 8 (Choose Expedited Shipping) |
Warranty | Up to 1 year [Limited-Warranty]* |
Payment | |
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HN3C51F-BL(TE85L Specifications
Part Number | HN3C51F-BL(TE85L,F | |
Brand | Toshiba Semiconductor and Storage | |
Lifecycle | Obsolete | |
RoHS | No RoHS Information | |
Product Line | Semiconductors | |
Category | Transistors | |
Subcategory | Bipolar (BJT) - Arrays | |
Manufacturer | Toshiba Semiconductor and Storage | |
Series | - | |
Transistor Type | 2 NPN (Dual) | |
Current - Collector (Ic) (Max) | 100mA | |
Voltage - Collector Emitter Breakdown (Max) | 120V | |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 1mA, 10mA | |
Current - Collector Cutoff (Max) | 100nA (ICBO) | |
DC Current Gain (hFE) (Min) @ Ic, Vce | 350 @ 2mA, 6V | |
Power - Max | 300mW | |
Frequency - Transition | 100MHz | |
Operating Temperature | 150°C (TJ) | |
Mounting Type | Surface Mount | |
Package / Case | SC-74, SOT-457 | |
Supplier Device Package | SM6 |
HN3C51F-BL(TE85L,F Documents
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Part Number | Description | Stock |
HN3C51F-BL(TE85L,F D# HN3C51F-BL(TE85LFTR-ND Toshiba America Electronic Components |
TRANS 2NPN 120V 0.1A SM6 |
Limited Supply - Call |
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