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| Datasheet | IRC630PBF |
| File Size | 1,171.9 KB |
| Total Pages | 9 |
| Manufacturer | Vishay Siliconix |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | IRC630PBF |
| Description | MOSFET N-CH 200V 9A TO-220-5 |
IRC630PBF - Vishay Siliconix
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IRC630PBF | Vishay Siliconix | MOSFET N-CH 200V 9A TO-220-5 | 301 More on Order |
URL Link
www.oemstron.com/datasheet/IRC630PBF
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Manufacturer Vishay Siliconix Series HEXFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200V Current - Continuous Drain (Id) @ 25°C 9A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 400mOhm @ 5.4A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 43nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 800pF @ 25V FET Feature Current Sensing Power Dissipation (Max) 74W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220-5 Package / Case TO-220-5 |