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Part Number | IRC630PBF |
OEMstron Part # | IRC630PBF |
Manufacturer | Vishay Siliconix |
Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
Description | MOSFET N-CH 200V 9A TO-220-5 |
Lifecycle | Obsolete |
RoHS | No RoHS Information |
EDA/CAD Models | IRC630PBF PCB Footprint and Symbol |
Warehouses | USA, Europe, China, Hong Kong SAR |
Estimated Delivery | Nov 26 - Dec 1 (Choose Expedited Shipping) |
Warranty | Up to 1 year [Limited-Warranty]* |
Payment | |
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IRC630PBF Specifications
Part Number | IRC630PBF | |
Brand | Vishay Siliconix | |
Lifecycle | Obsolete | |
RoHS | No RoHS Information | |
Product Line | Semiconductors | |
Category | Transistors | |
Subcategory | FETs, MOSFETs - Single | |
Manufacturer | Vishay Siliconix | |
Series | HEXFET® | |
FET Type | N-Channel | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | 200V | |
Current - Continuous Drain (Id) @ 25°C | 9A (Tc) | |
Drive Voltage (Max Rds On, Min Rds On) | 10V | |
Rds On (Max) @ Id, Vgs | 400mOhm @ 5.4A, 10V | |
Vgs(th) (Max) @ Id | 4V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 43nC @ 10V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 800pF @ 25V | |
FET Feature | Current Sensing | |
Power Dissipation (Max) | 74W (Tc) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | Through Hole | |
Supplier Device Package | TO-220-5 | |
Package / Case | TO-220-5 |
IRC630PBF Documents
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Part Number | Description | Stock |
IRC630PBF Vishay Siliconix |
MOSFET N-CH 200V 9A TO-220-5 |
Contact Us |
Part Number | Description | Stock |
IRC630PBF D# IRC630PBF-ND Vishay Siliconix |
MOSFET N-CH 200V 9A TO220-5 |
Limited Supply - Call |
Part Number | Description | Stock |
IRC630PBF D# NS-IRC630PBF Vishay Siliconix |
OEM/CM ONLY |
1556 |
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In Stock | 301 - More on Order |
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Quote Limit | No Limit |
Lead-Time | Can Ship Immediately |
Minimum | 1 |
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