Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | IXFB50N80Q2 |
| File Size | 222.97 KB |
| Total Pages | 4 |
| Manufacturer | IXYS |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | IXFB50N80Q2 |
| Description | MOSFET N-CH 800V 50A PLUS264 |
IXFB50N80Q2 - IXYS
The Products You May Be Interested In
 |
IXFB50N80Q2 | IXYS | MOSFET N-CH 800V 50A PLUS264 | 345 More on Order |
URL Link
www.oemstron.com/datasheet/IXFB50N80Q2
|
Manufacturer IXYS Series HiPerFET™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 800V Current - Continuous Drain (Id) @ 25°C 50A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 160mOhm @ 500mA, 10V Vgs(th) (Max) @ Id 5.5V @ 8mA Gate Charge (Qg) (Max) @ Vgs 260nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 7200pF @ 25V FET Feature - Power Dissipation (Max) 1135W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package PLUS264™ Package / Case TO-264-3, TO-264AA |