For Reference Only
Part Number | IXFB50N80Q2 |
OEMstron Part # | IXFB50N80Q2 |
Manufacturer | IXYS |
Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
Description | MOSFET N-CH 800V 50A PLUS264 |
Lifecycle | Active |
RoHS | No RoHS Information |
EDA/CAD Models | IXFB50N80Q2 PCB Footprint and Symbol |
Warehouses | USA, Europe, China, Hong Kong SAR |
Estimated Delivery | Feb 1 - Feb 6 (Choose Expedited Shipping) |
Warranty | Up to 1 year [Limited-Warranty]* |
Payment | |
Shipping |
IXFB50N80Q2 Specifications
Part Number | IXFB50N80Q2 | |
Brand | IXYS | |
Lifecycle | Active | |
RoHS | No RoHS Information | |
Product Line | Semiconductors | |
Category | Transistors | |
Subcategory | FETs, MOSFETs - Single | |
Manufacturer | IXYS | |
Series | HiPerFET™ | |
FET Type | N-Channel | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | 800V | |
Current - Continuous Drain (Id) @ 25°C | 50A (Tc) | |
Drive Voltage (Max Rds On, Min Rds On) | 10V | |
Rds On (Max) @ Id, Vgs | 160mOhm @ 500mA, 10V | |
Vgs(th) (Max) @ Id | 5.5V @ 8mA | |
Gate Charge (Qg) (Max) @ Vgs | 260nC @ 10V | |
Vgs (Max) | ±30V | |
Input Capacitance (Ciss) (Max) @ Vds | 7200pF @ 25V | |
FET Feature | - | |
Power Dissipation (Max) | 1135W (Tc) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | Through Hole | |
Supplier Device Package | PLUS264™ | |
Package / Case | TO-264-3, TO-264AA |
IXFB50N80Q2 Documents
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IXFB50N80Q2 IXYS Corporation |
Single N-Channel 800 V 1135 W 260 nC Surface Mount Power Mosfet - PLUS264 |
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IXFB50N80Q2 D# IXFB50N80Q2-ND IXYS Corporation |
MOSFET N-CH 800V 50A PLUS264 |
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IXFB50N80Q2 IXYS Corporation |
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Part Number | Description | Stock |
IXFB50N80Q2 IXYS Corporation |
RFQ |
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