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| Datasheet | NVMYS4D1N06CLTWG |
| File Size | 189.88 KB |
| Total Pages | 6 |
| Manufacturer | ON Semiconductor |
| Website | http://www.onsemi.com/ |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | NVMYS4D1N06CLTWG |
| Description | T6 60V LL LFPAK |
NVMYS4D1N06CLTWG - ON Semiconductor
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NVMYS4D1N06CLTWG | ON Semiconductor | T6 60V LL LFPAK | 205 More on Order |
URL Link
www.oemstron.com/datasheet/NVMYS4D1N06CLTWG
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Manufacturer ON Semiconductor Series Automotive, AEC-Q101 FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 22A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 4mOhm @ 50A, 10V Vgs(th) (Max) @ Id 2V @ 80µA Gate Charge (Qg) (Max) @ Vgs 34nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2200pF @ 25V FET Feature - Power Dissipation (Max) 3.7W (Ta), 79W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package LFPAK4 (5x6) Package / Case SOT-1023, 4-LFPAK |