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Part Number | NVMYS4D1N06CLTWG |
OEMstron Part # | NVMYS4D1N06CLTWG |
Manufacturer | ON Semiconductor |
Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
Description | T6 60V LL LFPAK |
Lifecycle | Active |
RoHS | No RoHS Information |
EDA/CAD Models | NVMYS4D1N06CLTWG PCB Footprint and Symbol |
Warehouses | USA, Europe, China, Hong Kong SAR |
Estimated Delivery | Jan 25 - Jan 30 (Choose Expedited Shipping) |
Warranty | Up to 1 year [Limited-Warranty]* |
Payment | |
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NVMYS4D1N06CLTWG Specifications
Part Number | NVMYS4D1N06CLTWG | |
Brand | ON Semiconductor | |
Lifecycle | Active | |
RoHS | No RoHS Information | |
Product Line | Semiconductors | |
Category | Transistors | |
Subcategory | FETs, MOSFETs - Single | |
Manufacturer | ON Semiconductor | |
Series | Automotive, AEC-Q101 | |
FET Type | N-Channel | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | 60V | |
Current - Continuous Drain (Id) @ 25°C | 22A (Ta), 100A (Tc) | |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
Rds On (Max) @ Id, Vgs | 4mOhm @ 50A, 10V | |
Vgs(th) (Max) @ Id | 2V @ 80µA | |
Gate Charge (Qg) (Max) @ Vgs | 34nC @ 10V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 2200pF @ 25V | |
FET Feature | - | |
Power Dissipation (Max) | 3.7W (Ta), 79W (Tc) | |
Operating Temperature | -55°C ~ 175°C (TJ) | |
Mounting Type | Surface Mount | |
Supplier Device Package | LFPAK4 (5x6) | |
Package / Case | SOT-1023, 4-LFPAK |
NVMYS4D1N06CLTWG Documents
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In Stock | 205 - More on Order |
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Quote Limit | No Limit |
Lead-Time | To be Confirmed |
Minimum | 1 |
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Pricing (USD)
Qty. | Unit Price | Ext. Price |
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1 | $ 1.2122 | $ 1.2122 |
100 | $ 1.2122 | $ 121.2200 |
500 | $ 1.2122 | $ 606.1000 |
1000 | $ 1.2122 | $ 1,212.2000 |
2500 | $ 1.2122 | $ 3,030.5000 |
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