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| Datasheet | RN1110MFV,L3F |
| File Size | 122.96 KB |
| Total Pages | 5 |
| Manufacturer | Toshiba Semiconductor and Storage |
| Website | http://www.toshiba.com/taec/ |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | RN1110MFV,L3F |
| Description | TRANS PREBIAS NPN 0.15W VESM |
RN1110MFV,L3F - Toshiba Semiconductor and Storage
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URL Link
www.oemstron.com/datasheet/RN1110MFV,L3F
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Manufacturer Toshiba Semiconductor and Storage Series - Transistor Type NPN - Pre-Biased Current - Collector (Ic) (Max) 100mA Voltage - Collector Emitter Breakdown (Max) 50V Resistor - Base (R1) 4.7 kOhms Resistor - Emitter Base (R2) - DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 5mA Current - Collector Cutoff (Max) 100nA (ICBO) Frequency - Transition - Power - Max 150mW Mounting Type Surface Mount Package / Case SOT-723 Supplier Device Package VESM |