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For Reference Only
| Part Number | RN1110MFV,L3F |
| OEMstron Part # | RN1110MFV-L3F |
| Manufacturer | Toshiba Semiconductor and Storage |
| Category | Semiconductors › Transistors › Bipolar (BJT) - Single, Pre-Biased |
| Description | TRANS PREBIAS NPN 0.15W VESM |
| Lifecycle | Active |
| RoHS | No RoHS Information |
| EDA/CAD Models | RN1110MFV,L3F PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | Feb 18 - Feb 23 (Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Payment |  |
| Shipping |  |
RN1110MFV Specifications
| Part Number | RN1110MFV,L3F | |
| Brand | Toshiba Semiconductor and Storage | |
| Lifecycle | Active | |
| RoHS | No RoHS Information | |
| Product Line | Semiconductors | |
| Category | Transistors | |
| Subcategory | Bipolar (BJT) - Single, Pre-Biased | |
| Manufacturer | Toshiba Semiconductor and Storage | |
| Series | - | |
| Transistor Type | NPN - Pre-Biased | |
| Current - Collector (Ic) (Max) | 100mA | |
| Voltage - Collector Emitter Breakdown (Max) | 50V | |
| Resistor - Base (R1) | 4.7 kOhms | |
| Resistor - Emitter Base (R2) | - | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 1mA, 5V | |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 5mA | |
| Current - Collector Cutoff (Max) | 100nA (ICBO) | |
| Frequency - Transition | - | |
| Power - Max | 150mW | |
| Mounting Type | Surface Mount | |
| Package / Case | SOT-723 | |
| Supplier Device Package | VESM |
RN1110MFV,L3F Documents
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| Part Number | Description | Stock |
|
RN1110MFV,L3F D# RN1110MFV,L3F Toshiba America Electronic Components |
Trans Digital BJT NPN 50V 0.1A 3-Pin VESM Embossed T/R - Tape and Reel (Alt: RN1110MFV,L3F) RoHS: Compliant
|
Americas - 0 |
| Part Number | Description | Stock |
|
RN1110MFV,L3F(T D# C1S751201099631 Toshiba America Electronic Components |
Pre-Biased Bipolar Transistor Min Qty: 50
Container: Cut Tape
|
7928 |
| Part Number | Description | Stock |
|
RN1110MFV,L3F(B Toshiba America Electronic Components |
RoHS (ship within 1day) - D/C 2018 |
7999 |
| Part Number | Description | Stock |
|
RN1110MFV,L3F D# RN1110MFVL3FTR-ND Toshiba America Electronic Components |
TRANS PREBIAS NPN 50V 0.1A VESM |
Temporarily Out of Stock |
| Part Number | Description | Stock |
|
RN1110MFVL3FT Toshiba America Electronic Components |
OEM/CM QUOTES ONLY | NO BROKERS |
108000 |
|
RN1110MFVL3FB Toshiba America Electronic Components |
OEM/CM QUOTES ONLY | NO BROKERS |
9599 |
| Part Number | Description | Stock |
|
RN1110MFV,L3F D# 757-RN1110MFVL3F Toshiba America Electronic Components |
Bipolar Transistors - Pre-Biased Bias Resistor Built-in Transistor RoHS: Compliant
|
15600 |
| Part Number | Description | Stock |
|
RN1110MFV,L3F(B Toshiba America Electronic Components |
6399 |
| Part Number | Description | Stock |
|
RN1110MFV.L3FT Toshiba America Electronic Components |
OEM/CM ONLY |
111 |
|
RN1110MFVL3FB Toshiba America Electronic Components |
OEM/CM ONLY |
8015 |
| Part Number | Description | Stock |
|
RN1110MFV,L3F Toshiba America Electronic Components |
Bipolar Transistors - Pre-Biased Bias Resistor Built-in Transistor pbFree: Pb-Free
|
Americas - 0 |
|
RN1110MFVL3F Toshiba America Electronic Components |
Bipolar Transistors - Pre-Biased TRANS VESM PD 0.15W F/1MHZ(LF) pbFree: Pb-Free
|
Americas - 0 |
| Part Number | Description | Stock |
|
RN1110MFV,L3F(T D# 43701658 Toshiba America Electronic Components |
Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RoHS: Compliant
|
Americas - 7928 |
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Quick Inquiry
| In Stock | 131 - More on Order |
|---|---|
| Quote Limit | No Limit |
| Lead-Time | To be Confirmed |
| Minimum | 1 |
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| 100 | $ 0.0000 | $ 0.0000 |
| 500 | $ 0.0000 | $ 0.0000 |
| 1000 | $ 0.0000 | $ 0.0000 |
| 2500 | $ 0.0000 | $ 0.0000 |
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