Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | SI7911DN-T1-GE3 |
| File Size | 91.35 KB |
| Total Pages | 6 |
| Manufacturer | Vishay Siliconix |
| Website | |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | SI7911DN-T1-GE3, SI7911DN-T1-E3 |
| Description | MOSFET 2P-CH 20V 4.2A 1212-8, MOSFET 2P-CH 20V 4.2A 1212-8 |
SI7911DN-T1-GE3 - Vishay Siliconix
The Products You May Be Interested In
 |
SI7911DN-T1-GE3 | Vishay Siliconix | MOSFET 2P-CH 20V 4.2A 1212-8 | 138 More on Order |
 |
SI7911DN-T1-E3 | Vishay Siliconix | MOSFET 2P-CH 20V 4.2A 1212-8 | 200 More on Order |
URL Link
|
Manufacturer Vishay Siliconix Series TrenchFET® FET Type 2 P-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 4.2A Rds On (Max) @ Id, Vgs 51mOhm @ 5.7A, 4.5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 15nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds - Power - Max 1.3W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case PowerPAK® 1212-8 Dual Supplier Device Package PowerPAK® 1212-8 Dual |
Manufacturer Vishay Siliconix Series TrenchFET® FET Type 2 P-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 4.2A Rds On (Max) @ Id, Vgs 51mOhm @ 5.7A, 4.5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 15nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds - Power - Max 1.3W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case PowerPAK® 1212-8 Dual Supplier Device Package PowerPAK® 1212-8 Dual |