For Reference Only
Part Number | SI7911DN-T1-GE3 |
OEMstron Part # | SI7911DN-T1-GE3 |
Manufacturer | Vishay Siliconix |
Category | Semiconductors › Transistors › FETs, MOSFETs - Arrays |
Description | MOSFET 2P-CH 20V 4.2A 1212-8 |
Lifecycle | Obsolete |
RoHS | No RoHS Information |
EDA/CAD Models | SI7911DN-T1-GE3 PCB Footprint and Symbol |
Warehouses | USA, Europe, China, Hong Kong SAR |
Estimated Delivery | Dec 6 - Dec 11 (Choose Expedited Shipping) |
Warranty | Up to 1 year [Limited-Warranty]* |
Payment | |
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SI7911DN-T1-GE3 Specifications
Part Number | SI7911DN-T1-GE3 | |
Brand | Vishay Siliconix | |
Lifecycle | Obsolete | |
RoHS | No RoHS Information | |
Product Line | Semiconductors | |
Category | Transistors | |
Subcategory | FETs, MOSFETs - Arrays | |
Manufacturer | Vishay Siliconix | |
Series | TrenchFET® | |
FET Type | 2 P-Channel (Dual) | |
FET Feature | Logic Level Gate | |
Drain to Source Voltage (Vdss) | 20V | |
Current - Continuous Drain (Id) @ 25°C | 4.2A | |
Rds On (Max) @ Id, Vgs | 51mOhm @ 5.7A, 4.5V | |
Vgs(th) (Max) @ Id | 1V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 15nC @ 4.5V | |
Input Capacitance (Ciss) (Max) @ Vds | - | |
Power - Max | 1.3W | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Package / Case | PowerPAK® 1212-8 Dual | |
Supplier Device Package | PowerPAK® 1212-8 Dual |
SI7911DN-T1-GE3 Documents
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Part Number | Description | Stock |
SI7911DN-T1-GE3 Vishay Siliconix |
MOSFET 2P-CH 20V 4.2A 1212-8 |
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Part Number | Description | Stock |
SI7911DN-T1-GE3 D# SI7911DN-T1-GE3TR-ND Vishay Siliconix |
MOSFET 2P-CH 20V 4.2A 1212-8 |
Limited Supply - Call |
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SI7911DN-T1-GE3 Vishay Intertechnologies |
In stock shipping within 2days |
3000 |
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3570 |
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SI7911DN-T1-GE3 Vishay Intertechnologies |
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SI7911DN-T1-GE3 D# NS-SI7911DN-T1-GE3 Vishay Siliconix |
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3083 |
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SI7911DNT1GE3 Vishay Intertechnologies |
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4011 |
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SI7911DN-T1-GE3 Vishay Intertechnologies |
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2009 |
Part Number | Description | Stock |
SI7911DN-T1-GE3 Vishay Huntington |
MOSFET 2P-CH 20V 4.2A 1212-8 |
27389 |
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