TPCP8203(TE85L Datasheet

Datasheet	TPCP8203(TE85L,F)
File Size	1,617.96 KB
Total Pages	63
Manufacturer	Toshiba Semiconductor and Storage
Website	http://www.toshiba.com/taec/
Total Parts	This datasheet covers 19 part numbers
Associated Parts	TPCP8203(TE85L,F), TPCC8009,LQ(O, TPC8A06-H(TE12LQM), TK50E08K3,S1X(S, TK50E06K3A,S1X(S, TK16A55D(STA4,Q,M), TK16A45D(STA4,Q,M), TPCA8A04-H(TE12L,Q, TPCA8012-H(TE12LQM, TPC8038-H(TE12L,Q), TPC8033-H(TE12LQM), TPC8032-H(TE12LQM), TPC8031-H(TE12LQM), TK14A45D(STA4,Q,M), TK14A45DA(STA4,QM), TK40E10K3,S1X(S, TK8A45DA(STA4,Q,M), TK18E10K3,S1X(S, TK25E06K3,S1X(S
Description	MOSFET 2N-CH 40V 4.7A PS-8, MOSFET N-CH 30V 24A 8TSON-ADV, MOSFET N-CH 30V 12A 8SOP, MOSFET N-CH 75V 50A TO-220AB, MOSFET N-CH 60V 50A TO-220AB

TPCP8203(TE85L,F) - Toshiba Semiconductor and Storage

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URL Link

www.oemstron.com/datasheet/TPCP8203(TE85L,F)

Toshiba Semiconductor and Storage

TPCP8203(TE85L,F)

Manufacturer

Toshiba Semiconductor and Storage

Series

FET Type

2 N-Channel (Dual)

FET Feature

Standard

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

4.7A

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

2.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

Input Capacitance (Ciss) (Max) @ Vds

Power - Max

360mW

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-SMD, Flat Lead

Supplier Device Package

PS-8 (2.9x2.4)

Toshiba Semiconductor and Storage

TPCC8009,LQ(O

Manufacturer

Toshiba Semiconductor and Storage

Series

U-MOSIV

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

24A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

Rds On (Max) @ Id, Vgs

7mOhm @ 12A, 10V

Vgs(th) (Max) @ Id

3V @ 200µA

Gate Charge (Qg) (Max) @ Vgs

26nC @ 10V

Vgs (Max)

Input Capacitance (Ciss) (Max) @ Vds

1270pF @ 10V

FET Feature

Power Dissipation (Max)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-TSON Advance (3.3x3.3)

Package / Case

8-PowerVDFN

Toshiba Semiconductor and Storage

TPC8A06-H(TE12LQM)

Manufacturer

Toshiba Semiconductor and Storage

Series

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

12A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

10.1mOhm @ 6A, 10V

Vgs(th) (Max) @ Id

2.3V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

19nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1800pF @ 10V

FET Feature

Schottky Diode (Body)

Power Dissipation (Max)

Operating Temperature

Mounting Type

Surface Mount

Supplier Device Package

8-SOP (5.5x6.0)

Package / Case

8-SOIC (0.173", 4.40mm Width)

Toshiba Semiconductor and Storage

TK50E08K3,S1X(S

Manufacturer

Toshiba Semiconductor and Storage

Series

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

75V

Current - Continuous Drain (Id) @ 25°C

50A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

Rds On (Max) @ Id, Vgs

12mOhm @ 25A, 10V

Vgs(th) (Max) @ Id

Gate Charge (Qg) (Max) @ Vgs

55nC @ 10V

Vgs (Max)

Input Capacitance (Ciss) (Max) @ Vds

FET Feature

Power Dissipation (Max)

Operating Temperature

Mounting Type

Through Hole

Supplier Device Package

TO-220-3

Package / Case

TO-220-3

Toshiba Semiconductor and Storage

TK50E06K3A,S1X(S

Manufacturer

Toshiba Semiconductor and Storage

Series

U-MOSIV

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

50A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

Rds On (Max) @ Id, Vgs

8.5mOhm @ 25A, 10V

Vgs(th) (Max) @ Id

Gate Charge (Qg) (Max) @ Vgs

54nC @ 10V

Vgs (Max)

Input Capacitance (Ciss) (Max) @ Vds

FET Feature

Power Dissipation (Max)

Operating Temperature

Mounting Type

Through Hole

Supplier Device Package

TO-220-3

Package / Case

TO-220-3

Toshiba Semiconductor and Storage

TK16A55D(STA4,Q,M)

Manufacturer

Toshiba Semiconductor and Storage

Series

π-MOSVII

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

550V

Current - Continuous Drain (Id) @ 25°C

16A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

Rds On (Max) @ Id, Vgs

330mOhm @ 8A, 10V

Vgs(th) (Max) @ Id

4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

45nC @ 10V

Vgs (Max)

Input Capacitance (Ciss) (Max) @ Vds

2600pF @ 25V

FET Feature

Power Dissipation (Max)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220SIS

Package / Case

TO-220-3 Full Pack

Toshiba Semiconductor and Storage

TK16A45D(STA4,Q,M)

Manufacturer

Toshiba Semiconductor and Storage

Series

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

450V

Current - Continuous Drain (Id) @ 25°C

16A

Drive Voltage (Max Rds On, Min Rds On)

Rds On (Max) @ Id, Vgs

270mOhm @ 8A, 10V

Vgs(th) (Max) @ Id

Gate Charge (Qg) (Max) @ Vgs

Vgs (Max)

Input Capacitance (Ciss) (Max) @ Vds

FET Feature

Power Dissipation (Max)

Operating Temperature

Mounting Type

Through Hole

Supplier Device Package

TO-220SIS

Package / Case

TO-220-3 Full Pack

Toshiba Semiconductor and Storage

TPCA8A04-H(TE12L,Q

Manufacturer

Toshiba Semiconductor and Storage

Series

U-MOSV-H

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

44A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

3.2mOhm @ 22A, 10V

Vgs(th) (Max) @ Id

2.3V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

59nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

5700pF @ 10V

FET Feature

Power Dissipation (Max)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SOP Advance (5x5)

Package / Case

8-PowerVDFN

Toshiba Semiconductor and Storage

TPCA8012-H(TE12LQM

Manufacturer

Toshiba Semiconductor and Storage

Series

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

40A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

4.9mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

2.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

42nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3713pF @ 10V

FET Feature

Power Dissipation (Max)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SOP Advance (5x5)

Package / Case

8-PowerVDFN

Toshiba Semiconductor and Storage

TPC8038-H(TE12L,Q)

Manufacturer

Toshiba Semiconductor and Storage

Series

U-MOSV-H

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

12A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

Rds On (Max) @ Id, Vgs

11.4mOhm @ 6A, 10V

Vgs(th) (Max) @ Id

2.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

21nC @ 10V

Vgs (Max)

Input Capacitance (Ciss) (Max) @ Vds

2150pF @ 10V

FET Feature

Power Dissipation (Max)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SOP (5.5x6.0)

Package / Case

8-SOIC (0.173", 4.40mm Width)

Toshiba Semiconductor and Storage

TPC8033-H(TE12LQM)

Manufacturer

Toshiba Semiconductor and Storage

Series

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

17A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

Rds On (Max) @ Id, Vgs

5.3mOhm @ 8.5A, 10V

Vgs(th) (Max) @ Id

2.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

42nC @ 10V

Vgs (Max)

Input Capacitance (Ciss) (Max) @ Vds

3713pF @ 10V

FET Feature

Power Dissipation (Max)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SOP (5.5x6.0)

Package / Case

8-SOIC (0.173", 4.40mm Width)

Toshiba Semiconductor and Storage

TPC8032-H(TE12LQM)

Manufacturer

Toshiba Semiconductor and Storage

Series

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

15A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

Rds On (Max) @ Id, Vgs

6.5mOhm @ 7.5A, 10V

Vgs(th) (Max) @ Id

2.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

33nC @ 10V

Vgs (Max)

Input Capacitance (Ciss) (Max) @ Vds

2846pF @ 10V

FET Feature

Power Dissipation (Max)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SOP (5.5x6.0)

Package / Case

8-SOIC (0.173", 4.40mm Width)