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Part Number | TPC8A06-H(TE12LQM) |
OEMstron Part # | TPC8A06-H-TE12LQM |
Manufacturer | Toshiba Semiconductor and Storage |
Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
Description | MOSFET N-CH 30V 12A 8SOP |
Lifecycle | Obsolete |
RoHS | No RoHS Information |
EDA/CAD Models | TPC8A06-H(TE12LQM) PCB Footprint and Symbol |
Warehouses | USA, Europe, China, Hong Kong SAR |
Estimated Delivery | Nov 26 - Dec 1 (Choose Expedited Shipping) |
Warranty | Up to 1 year [Limited-Warranty]* |
Payment | |
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TPC8A06-H(TE12LQM) Specifications
Part Number | TPC8A06-H(TE12LQM) | |
Brand | Toshiba Semiconductor and Storage | |
Lifecycle | Obsolete | |
RoHS | No RoHS Information | |
Product Line | Semiconductors | |
Category | Transistors | |
Subcategory | FETs, MOSFETs - Single | |
Manufacturer | Toshiba Semiconductor and Storage | |
Series | - | |
FET Type | N-Channel | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | 30V | |
Current - Continuous Drain (Id) @ 25°C | 12A (Ta) | |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
Rds On (Max) @ Id, Vgs | 10.1mOhm @ 6A, 10V | |
Vgs(th) (Max) @ Id | 2.3V @ 1mA | |
Gate Charge (Qg) (Max) @ Vgs | 19nC @ 10V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 1800pF @ 10V | |
FET Feature | Schottky Diode (Body) | |
Power Dissipation (Max) | - | |
Operating Temperature | - | |
Mounting Type | Surface Mount | |
Supplier Device Package | 8-SOP (5.5x6.0) | |
Package / Case | 8-SOIC (0.173", 4.40mm Width) |
TPC8A06-H(TE12LQM) Documents
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Part Number | Description | Stock |
TPC8A06-H(TE12LQM) Toshiba America Electronic Components |
MOSFET N-CH SBD 30V 12A 8SOP |
Contact Us |
Part Number | Description | Stock |
TPC8A06-H(TE12LQM) D# TPC8A06-H(TE12LQM)-ND Toshiba America Electronic Components |
MOSFET N-CH 30V 12A 8SOP |
Limited Supply - Call |
Part Number | Description | Stock |
TPC8A06-H(TE12LQM) D# NS-TPC8A06-H(TE12LQM) Toshiba Semiconductor and Storage |
OEM/CM ONLY |
5760 |
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