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Part Number | 2N6661-2 |
OEMstron Part # | 2N6661-2 |
Manufacturer | Vishay Siliconix |
Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
Description | MOSFET N-CH 90V 0.86A TO-205 |
Lifecycle | Obsolete |
RoHS | No RoHS Information |
EDA/CAD Models | 2N6661-2 PCB Footprint and Symbol |
Warehouses | USA, Europe, China, Hong Kong SAR |
Estimated Delivery | Nov 24 - Nov 29 (Choose Expedited Shipping) |
Warranty | Up to 1 year [Limited-Warranty]* |
Payment | |
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2N6661-2 Specifications
Part Number | 2N6661-2 | |
Brand | Vishay Siliconix | |
Lifecycle | Obsolete | |
RoHS | No RoHS Information | |
Product Line | Semiconductors | |
Category | Transistors | |
Subcategory | FETs, MOSFETs - Single | |
Manufacturer | Vishay Siliconix | |
Series | - | |
FET Type | N-Channel | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | 90V | |
Current - Continuous Drain (Id) @ 25°C | 860mA (Tc) | |
Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V | |
Rds On (Max) @ Id, Vgs | 4Ohm @ 1A, 10V | |
Vgs(th) (Max) @ Id | 2V @ 1mA | |
Gate Charge (Qg) (Max) @ Vgs | - | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 50pF @ 25V | |
FET Feature | - | |
Power Dissipation (Max) | 725mW (Ta), 6.25W (Tc) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | Through Hole | |
Supplier Device Package | TO-39 | |
Package / Case | TO-205AD, TO-39-3 Metal Can |
2N6661-2 Documents
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Part Number | Description | Stock |
2N6661-2 Vishay Siliconix |
TO205 NCH MOSFET 90V 4R |
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Part Number | Description | Stock |
2N6661-2 D# 2N6661-2-ND Vishay Siliconix |
MOSFET N-CH 90V 860MA TO39 |
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