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Part Number | APTM100DA40T1G |
OEMstron Part # | APTM100DA40T1G |
Manufacturer | Microsemi |
Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
Description | MOSFET N-CH 1000V 20A SP1 |
Lifecycle | Obsolete |
RoHS | No RoHS Information |
EDA/CAD Models | APTM100DA40T1G PCB Footprint and Symbol |
Warehouses | USA, Europe, China, Hong Kong SAR |
Estimated Delivery | Nov 26 - Dec 1 (Choose Expedited Shipping) |
Warranty | Up to 1 year [Limited-Warranty]* |
Payment | |
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APTM100DA40T1G Specifications
Part Number | APTM100DA40T1G | |
Brand | Microsemi | |
Lifecycle | Obsolete | |
RoHS | No RoHS Information | |
Product Line | Semiconductors | |
Category | Transistors | |
Subcategory | FETs, MOSFETs - Single | |
Manufacturer | Microsemi Corporation | |
Series | - | |
FET Type | N-Channel | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | 1000V | |
Current - Continuous Drain (Id) @ 25°C | 20A (Tc) | |
Drive Voltage (Max Rds On, Min Rds On) | 10V | |
Rds On (Max) @ Id, Vgs | 480mOhm @ 16A, 10V | |
Vgs(th) (Max) @ Id | 5V @ 2.5mA | |
Gate Charge (Qg) (Max) @ Vgs | 260nC @ 10V | |
Vgs (Max) | ±30V | |
Input Capacitance (Ciss) (Max) @ Vds | 6800pF @ 25V | |
FET Feature | - | |
Power Dissipation (Max) | 357W (Tc) | |
Operating Temperature | -40°C ~ 150°C (TJ) | |
Mounting Type | Chassis Mount | |
Supplier Device Package | SP1 | |
Package / Case | SP1 |
APTM100DA40T1G Documents
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Part Number | Description | Stock |
APTM100DA40T1G Microsemi Corporation |
MOSFET N-CH 1000V 20A SP1 |
Contact Us |
Part Number | Description | Stock |
APTM100DA40T1G D# APTM100DA40T1G-ND Microsemi Corporation |
MOSFET N-CH 1000V 20A SP1 |
Limited Supply - Call |
Part Number | Description | Stock |
APTM100DA40T1G D# NS-APTM100DA40T1G Microsemi Corporation |
OEM/CM ONLY |
4834 |
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