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| Part Number | APTM120DA56T1G |
| OEMstron Part # | APTM120DA56T1G |
| Manufacturer | Microsemi |
| Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
| Description | MOSFET N-CH 1200V 18A SP1 |
| Lifecycle | Obsolete |
| RoHS | No RoHS Information |
| EDA/CAD Models | APTM120DA56T1G PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | Nov 26 - Dec 1 (Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Payment |  |
| Shipping |  |
APTM120DA56T1G Specifications
| Part Number | APTM120DA56T1G | |
| Brand | Microsemi | |
| Lifecycle | Obsolete | |
| RoHS | No RoHS Information | |
| Product Line | Semiconductors | |
| Category | Transistors | |
| Subcategory | FETs, MOSFETs - Single | |
| Manufacturer | Microsemi Corporation | |
| Series | - | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 1200V | |
| Current - Continuous Drain (Id) @ 25°C | 18A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Rds On (Max) @ Id, Vgs | 672mOhm @ 14A, 10V | |
| Vgs(th) (Max) @ Id | 5V @ 2.5mA | |
| Gate Charge (Qg) (Max) @ Vgs | 300nC @ 10V | |
| Vgs (Max) | ±30V | |
| Input Capacitance (Ciss) (Max) @ Vds | 7736pF @ 25V | |
| FET Feature | - | |
| Power Dissipation (Max) | 390W (Tc) | |
| Operating Temperature | -40°C ~ 150°C (TJ) | |
| Mounting Type | Chassis Mount | |
| Supplier Device Package | SP1 | |
| Package / Case | SP1 |
APTM120DA56T1G Documents
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| Part Number | Description | Stock |
|
APTM120DA56T1G Microsemi Corporation |
MOSFET N-CH 1200V 18A SP1 |
Contact Us |
| Part Number | Description | Stock |
|
APTM120DA56T1G D# APTM120DA56T1G-ND Microsemi Corporation |
MOSFET N-CH 1200V 18A SP1 |
Limited Supply - Call |
| Part Number | Description | Stock |
|
APTM120DA56T1G D# NS-APTM120DA56T1G Microsemi Corporation |
OEM/CM ONLY |
9428 |
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| In Stock | 177 - More on Order |
|---|---|
| Quote Limit | No Limit |
| Lead-Time | To be Confirmed |
| Minimum | 1 |
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