For Reference Only
Part Number | BSC046N10NS3GATMA1 |
OEMstron Part # | BSC046N10NS3GATMA1 |
Manufacturer | Infineon Technologies |
Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
Description | MOSFET N-CH 100V 100A TDSON-8 |
Lifecycle | Last Time Buy |
RoHS | No RoHS Information |
EDA/CAD Models | BSC046N10NS3GATMA1 PCB Footprint and Symbol |
Warehouses | USA, Europe, China, Hong Kong SAR |
Estimated Delivery | Nov 27 - Dec 2 (Choose Expedited Shipping) |
Warranty | Up to 1 year [Limited-Warranty]* |
Payment | |
Shipping |
BSC046N10NS3GATMA1 Specifications
Part Number | BSC046N10NS3GATMA1 | |
Brand | Infineon Technologies | |
Lifecycle | Last Time Buy | |
RoHS | No RoHS Information | |
Product Line | Semiconductors | |
Category | Transistors | |
Subcategory | FETs, MOSFETs - Single | |
Manufacturer | Infineon Technologies | |
Series | OptiMOS™ | |
FET Type | N-Channel | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | 100V | |
Current - Continuous Drain (Id) @ 25°C | 17A (Ta), 100A (Tc) | |
Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V | |
Rds On (Max) @ Id, Vgs | 4.6mOhm @ 50A, 10V | |
Vgs(th) (Max) @ Id | 3.5V @ 120µA | |
Gate Charge (Qg) (Max) @ Vgs | 63nC @ 10V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 4500pF @ 50V | |
FET Feature | - | |
Power Dissipation (Max) | 156W (Tc) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Supplier Device Package | PG-TDSON-8-7 | |
Package / Case | 8-PowerTDFN |
BSC046N10NS3GATMA1 Documents
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Global Supply Chains - Reliable and Authorized Distributor Resources
Part Number | Description | Stock |
BSC046N10NS3GATMA1 D# 50Y1804 Infineon Technologies AG |
Trans MOSFET N-CH 100V 17A 8-Pin TDSON EP - Product that comes on tape, but is not reeled (Alt: 50Y1804) RoHS: Compliant
|
Americas - 0 |
Part Number | Description | Stock |
BSC046N10NS3GATMA1 Infineon Technologies AG |
MOSFET N-CH 100V 100A TDSON-8 |
15000 |
Part Number | Description | Stock |
BSC046N10NS3GATMA1 D# BSC046N10NS3GATMA1TR-ND Infineon Technologies AG |
MOSFET N-CH 100V 17A/100A TDSON |
Limited Supply - Call |
Part Number | Description | Stock |
BSC046N10NS3GATMA1 D# 2480739 Infineon Technologies AG |
MOSFET, N-CH, 100V, 100A, TDSON-8 RoHS: Compliant
Min Qty: 1
Container: Cut Tape
|
0 |
Part Number | Description | Stock |
BSC046N10NS3GATMA1 Infineon Technologies AG |
OEM/CM QUOTES ONLY | NO BROKERS |
1027 |
Part Number | Description | Stock |
BSC046N10NS3GATMA1 D# 50Y1804 Infineon Technologies AG |
MOSFET, N-CH, 100V, 100A, 150DEG C, 156W, Transistor Polarity:N Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:100A, On Resistance Rds(on):0.004ohm, Transistor Mounting:Surface Mount, Rds(on) Test Voltage Vgs:10VRoHS Compliant: Yes RoHS: Compliant
Min Qty: 1
Container: Cut Tape
|
0 |
Part Number | Description | Stock |
BSC046N10NS3GATMA1 D# NS-BSC046N10NS3GATMA1 Infineon Technologies AG |
OEM/CM ONLY |
3526 |
Part Number | Description | Stock |
BSC046N10NS3GATMA1 Infineon Technologies AG |
POWER FIELD-EFFECT TRANSISTOR, 17A I(D), 100V, 0.0046OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET |
93 |
Part Number | Description | Stock |
BSC046N10NS3GATMA1 D# 9064321 Infineon Technologies AG |
N-Channel MOSFET, 100 A, 100 V, 8-Pin TDSON Infineon BSC046N10NS3GATMA1, PK Min Qty: 4
Container: Package
|
2 |
Part Number | Description | Stock |
BSC046N10NS3GATMA1 Infineon Technologies AG |
OEM/CM ONLY |
9976 |
Part Number | Description | Stock |
BSC046N10NS3GATMA1 Infineon Technologies AG |
shipping today |
124 |
Part Number | Description | Stock |
BSC046N10NS3GATMA1 D# 2480739 Infineon Technologies AG |
MOSFET, N-CH, 100V, 100A, TDSON-8 RoHS: Compliant
Min Qty: 1
Container: Cut Tape
|
0 |
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