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BSC882N03LSGATMA1

BSC882N03LSGATMA1
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For Reference Only

Part Number BSC882N03LSGATMA1
OEMstron Part # BSC882N03LSGATMA1
Manufacturer Infineon Technologies
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH TDSON-8
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models BSC882N03LSGATMA1 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Dec 6 - Dec 11 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

BSC882N03LSGATMA1 Specifications

Part Number BSC882N03LSGATMA1
Brand Infineon Technologies
Lifecycle Active
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Infineon Technologies
Series -
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 34V
Current - Continuous Drain (Id) @ 25°C -
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 4.2mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 46nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3700pF @ 15V
FET Feature -
Power Dissipation (Max) -
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TDSON-8-1
Package / Case 8-PowerTDFN

BSC882N03LSGATMA1 Documents

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Part Number Description Stock

BSC882N03LSGATMA1

D# V36:1790_06384706

Infineon Technologies AG

OPTIMOS 3 M-SERIES POWER-MOSFET

Americas - 0
Part Number Description Stock

BSC882N03LSGATMA1

D# BSC882N03LSGATMA1

Infineon Technologies AG

Trans MOSFET N-CH 34V 100A 8-Pin TDSON - Bulk (Alt: BSC882N03LSGATMA1)

RoHS: Compliant
Americas - 5000
Part Number Description Stock

BSC882N03LSGATMA1

D# 2156-BSC882N03LSGATMA1-ND

Rochester Electronics LLC

MOSFET N-CH 34V TDSON-8-1

5000 In Stock
Part Number Description Stock

BSC882N03LSGATMA1

D# 2781055

Infineon Technologies AG

TRANSITIONAL MOSFETS

RoHS: Compliant
Min Qty: 1
Container: Cut Tape
5000
Part Number Description Stock

BSC882N03LSGATMA1

Infineon Technologies AG

LV POWER MOS

RoHS: Contact Manufacturer
pbFree: Yes
0 Reel
Part Number Description Stock

BSC882N03LSGATMA1

Infineon Technologies AG

OEM/CM QUOTES ONLY | NO BROKERS

5750
Part Number Description Stock

BSC882N03LS G

D# 726-BSC882N03LSG

Infineon Technologies AG

MOSFET N-Ch 34V 100A SON-8

RoHS: Compliant
4998
Part Number Description Stock

BSC882N03LSGATMA1

D# 68AC4409

Infineon Technologies AG

TRANSITIONAL MOSFETS, Transistor Polarity:N Channel, Drain Source Voltage Vds:34V, On Resistance Rds(on):4.2mohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs:2.2V, Power Dissipation Pd:-, Transistor Case Style:-, No. of RoHS Compliant: Yes

RoHS: Compliant
Min Qty: 1
Container: Cut Tape
5000
Part Number Description Stock

BSC882N03LSGATMA1

Infineon Technologies AG

N-Channel Power MOSFET

RoHS: Compliant
5000
Part Number Description Stock

BSC882N03LSGATMA1

Infineon Technologies AG

OEM/CM ONLY

5095
Part Number Description Stock

BSC882N03LSGATMA1

D# 53364235

Infineon Technologies AG

OPTIMOS 3 M-SERIES POWER-MOSFET

Americas - 10000
Part Number Description Stock

BSC882N03LSGATMA1

D# 2781055

Infineon Technologies AG

TRANSITIONAL MOSFETS

RoHS: Compliant
Min Qty: 1
Container: Cut Tape
5000

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