For Reference Only
Part Number | BSP129E6327 |
OEMstron Part # | BSP129E6327 |
Manufacturer | Infineon Technologies |
Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
Description | MOSFET N-CH 240V 350MA SOT223 |
Lifecycle | Obsolete |
RoHS | No RoHS Information |
EDA/CAD Models | BSP129E6327 PCB Footprint and Symbol |
Warehouses | USA, Europe, China, Hong Kong SAR |
Estimated Delivery | Nov 26 - Dec 1 (Choose Expedited Shipping) |
Warranty | Up to 1 year [Limited-Warranty]* |
Payment | |
Shipping |
BSP129E6327 Specifications
Part Number | BSP129E6327 | |
Brand | Infineon Technologies | |
Lifecycle | Obsolete | |
RoHS | No RoHS Information | |
Product Line | Semiconductors | |
Category | Transistors | |
Subcategory | FETs, MOSFETs - Single | |
Manufacturer | Infineon Technologies | |
Series | SIPMOS® | |
FET Type | N-Channel | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | 240V | |
Current - Continuous Drain (Id) @ 25°C | 350mA (Ta) | |
Drive Voltage (Max Rds On, Min Rds On) | 0V, 10V | |
Rds On (Max) @ Id, Vgs | 6Ohm @ 350mA, 10V | |
Vgs(th) (Max) @ Id | 1V @ 108µA | |
Gate Charge (Qg) (Max) @ Vgs | 5.7nC @ 5V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 108pF @ 25V | |
FET Feature | Depletion Mode | |
Power Dissipation (Max) | 1.8W (Ta) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Supplier Device Package | PG-SOT223-4 | |
Package / Case | TO-261-4, TO-261AA |
BSP129E6327 Documents
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Part Number | Description | Stock |
BSP129E6327 Infineon Technologies AG |
766 |
Part Number | Description | Stock |
BSP129E6327T Infineon Technologies AG |
MOSFET N-CH 240V 350MA SOT223 |
Contact Us |
BSP129E6327 Infineon Technologies AG |
MOSFET N-CH 240V 350MA SOT223 |
Contact Us |
Part Number | Description | Stock |
BSP129E6327 Infineon Technologies AG |
Power Field-Effect Transistor, 0.2A I(D), 240V, 20ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Not Compliant
|
Europe - 930 |
Part Number | Description | Stock |
BSP129E6327T D# BSP129XTINTR-ND Infineon Technologies AG |
MOSFET N-CH 240V 350MA SOT223-4 |
Limited Supply - Call |
BSP129E6327 D# BSP129INTR-ND Infineon Technologies AG |
MOSFET N-CH 240V 350MA SOT223-4 |
Limited Supply - Call |
Part Number | Description | Stock |
BSP129 E6327 Infineon Technologies AG |
In stock shipping within 2days |
2783 |
Part Number | Description | Stock |
BSP129E6327T Infineon Technologies AG |
OEM/CM QUOTES ONLY | NO BROKERS |
857 |
BSP129E6327 INFI |
OEM/CM QUOTES ONLY | NO BROKERS |
67875 |
Part Number | Description | Stock |
BSP129 E6327 Infineon Technologies AG |
OEM/CM Immediate delivery |
2783 |
Part Number | Description | Stock |
BSP129E6327T D# NS-BSP129E6327T Infineon Technologies AG |
OEM/CM ONLY |
4689 |
BSP129E6327 D# NS-BSP129E6327 Infineon Technologies AG |
OEM/CM ONLY |
1793 |
Part Number | Description | Stock |
BSP129E6327 Infineon Technologies AG |
POWER FIELD-EFFECT TRANSISTOR, 0.2A I(D), 240V, 20OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET |
588 |
Part Number | Description | Stock |
BSP129 E6327 Infineon Technologies AG |
OEM/CM ONLY |
71609 |
BSP129E6327T Infineon Technologies AG |
OEM/CM ONLY |
761 |
Part Number | Description | Stock |
BSP129 E6327 Infineon Technologies AG |
IN stock Immediate delivery |
2798 |
Part Number | Description | Stock |
BSP129E6327 Infineon Technologies AG |
shipping today |
33 |
BSP129 E6327 Infineon Technologies AG |
shipping today |
14999 |
BSP129E6327T Infineon Technologies AG |
shipping today |
45635 |
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Quote Limit | No Limit |
Lead-Time | To be Confirmed |
Minimum | 1 |
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