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Part Number | BSP295E6327T |
OEMstron Part # | BSP295E6327T |
Manufacturer | Infineon Technologies |
Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
Description | MOSFET N-CH 60V 1.8A SOT223 |
Lifecycle | Obsolete |
RoHS | No RoHS Information |
EDA/CAD Models | BSP295E6327T PCB Footprint and Symbol |
Warehouses | USA, Europe, China, Hong Kong SAR |
Estimated Delivery | Jan 25 - Jan 30 (Choose Expedited Shipping) |
Warranty | Up to 1 year [Limited-Warranty]* |
Payment | |
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BSP295E6327T Specifications
Part Number | BSP295E6327T | |
Brand | Infineon Technologies | |
Lifecycle | Obsolete | |
RoHS | No RoHS Information | |
Product Line | Semiconductors | |
Category | Transistors | |
Subcategory | FETs, MOSFETs - Single | |
Manufacturer | Infineon Technologies | |
Series | SIPMOS® | |
FET Type | N-Channel | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | 60V | |
Current - Continuous Drain (Id) @ 25°C | 1.8A (Ta) | |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
Rds On (Max) @ Id, Vgs | 300mOhm @ 1.8A, 10V | |
Vgs(th) (Max) @ Id | 1.8V @ 400µA | |
Gate Charge (Qg) (Max) @ Vgs | 17nC @ 10V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 368pF @ 25V | |
FET Feature | - | |
Power Dissipation (Max) | 1.8W (Ta) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Supplier Device Package | PG-SOT223-4 | |
Package / Case | TO-261-4, TO-261AA |
BSP295E6327T Documents
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Part Number | Description | Stock |
BSP295E6327T Infineon Technologies AG |
MOSFET N-CH 60V 1.8A SOT223 |
Contact Us |
Part Number | Description | Stock |
BSP295E6327T D# BSP295XTINTR-ND Infineon Technologies AG |
MOSFET N-CH 60V 1.8A SOT223-4 |
Limited Supply - Call |
Part Number | Description | Stock |
BSP295E6327T D# NS-BSP295E6327T Infineon Technologies AG |
OEM/CM ONLY |
1824 |
Part Number | Description | Stock |
BSP295E6327T Infineon Technologies AG |
shipping today |
45635 |
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