Semiconductors
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For Reference Only
| Part Number | BSP296E6327 |
| OEMstron Part # | BSP296E6327 |
| Manufacturer | Infineon Technologies |
| Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
| Description | MOSFET N-CH 100V 1.1A SOT223 |
| Lifecycle | Obsolete |
| RoHS | No RoHS Information |
| EDA/CAD Models | BSP296E6327 PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | Nov 24 - Nov 29 (Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Payment |  |
| Shipping |  |
BSP296E6327 Specifications
| Part Number | BSP296E6327 | |
| Brand | Infineon Technologies | |
| Lifecycle | Obsolete | |
| RoHS | No RoHS Information | |
| Product Line | Semiconductors | |
| Category | Transistors | |
| Subcategory | FETs, MOSFETs - Single | |
| Manufacturer | Infineon Technologies | |
| Series | SIPMOS® | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 100V | |
| Current - Continuous Drain (Id) @ 25°C | 1.1A (Ta) | |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
| Rds On (Max) @ Id, Vgs | 700mOhm @ 1.1A, 10V | |
| Vgs(th) (Max) @ Id | 1.8V @ 400µA | |
| Gate Charge (Qg) (Max) @ Vgs | 17.2nC @ 10V | |
| Vgs (Max) | ±20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 364pF @ 25V | |
| FET Feature | - | |
| Power Dissipation (Max) | 1.79W (Ta) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | PG-SOT223-4 | |
| Package / Case | TO-261-4, TO-261AA |
BSP296E6327 Documents
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Global Supply Chains - Reliable and Authorized Distributor Resources
| Part Number | Description | Stock |
|
BSP296L6327HTSA1 D# BSP296L6327HTSA1 Infineon Technologies AG |
MOSFET N-CH 100V 1.1A SOT-223 - Bulk (Alt: BSP296L6327HTSA1) RoHS: Compliant
|
Americas - 220000 |
| Part Number | Description | Stock |
|
BSP296L6327HTSA1 D# SP000089209 Infineon Technologies AG |
MOSFET N-CH 100V 1.1A SOT-223 (Alt: SP000089209) |
Europe - 0 |
| Part Number | Description | Stock |
|
BSP296E6327 Infineon Technologies AG |
N/A 1 A, 100 V, 1.4 ohm, N-CHANNEL, Si, POWER, MOSFET SOT-223, 4 PIN |
10 |
| Part Number | Description | Stock |
|
BSP296E6327 Siemens |
Power Field-Effect Transistor, 1A I(D), 100V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Not Compliant
|
Europe - 2545 |
| Part Number | Description | Stock |
|
BSP296E6327 D# BSP296INTR-ND Infineon Technologies AG |
MOSFET N-CH 100V 1.1A SOT223-4 |
Limited Supply - Call |
|
BSP296L6327HTSA1 D# BSP296L6327HTSA1TR-ND Infineon Technologies AG |
MOSFET N-CH 100V 1.1A SOT223-4 |
Limited Supply - Call |
| Part Number | Description | Stock |
|
BSP296E6327 Infineon Technologies AG |
In stock shipping within 2days |
197 |
| Part Number | Description | Stock |
|
BSP296E632701 |
OEM/CM QUOTES ONLY | NO BROKERS |
101 |
|
BSP296E6327 MFG |
OEM/CM QUOTES ONLY | NO BROKERS |
59800 |
|
BSP296L6327HTSA1 Rochester Electronics LLC |
OEM/CM QUOTES ONLY | NO BROKERS |
285200 |
| Part Number | Description | Stock |
|
BSP296E6327 D# NS-BSP296E6327 Infineon Technologies AG |
OEM/CM ONLY |
7735 |
| Part Number | Description | Stock |
|
BSP296L6327HTSA1 Infineon Technologies AG |
BSP296 - SIPMOS Small-Signal N-Channel MOSFET RoHS: Compliant
|
220000 |
| Part Number | Description | Stock |
|
BSP296E632701 |
OEM/CM ONLY |
104 |
|
BSP296E6327 Infineon Technologies AG |
OEM/CM ONLY |
54301 |
| Part Number | Description | Stock |
|
BSP296E6327 Infineon Technologies AG |
shipping today |
45635 |
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Quick Inquiry
| In Stock | 199 - More on Order |
|---|---|
| Quote Limit | No Limit |
| Lead-Time | Can Ship Immediately |
| Minimum | 1 |
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Pricing (USD)
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1 | $ 0.0000 | $ 0.0000 |
| 100 | $ 0.0000 | $ 0.0000 |
| 500 | $ 0.0000 | $ 0.0000 |
| 1000 | $ 0.0000 | $ 0.0000 |
| 2500 | $ 0.0000 | $ 0.0000 |
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