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| Part Number | BSP300L6327HUSA1 |
| OEMstron Part # | BSP300L6327HUSA1 |
| Manufacturer | Infineon Technologies |
| Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
| Description | MOSFET N-CH 800V 190MA SOT-223 |
| Lifecycle | Obsolete |
| RoHS | No RoHS Information |
| EDA/CAD Models | BSP300L6327HUSA1 PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | Mar 21 - Mar 26 (Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Payment |  |
| Shipping |  |
BSP300L6327HUSA1 Specifications
| Part Number | BSP300L6327HUSA1 | |
| Brand | Infineon Technologies | |
| Lifecycle | Obsolete | |
| RoHS | No RoHS Information | |
| Product Line | Semiconductors | |
| Category | Transistors | |
| Subcategory | FETs, MOSFETs - Single | |
| Manufacturer | Infineon Technologies | |
| Series | SIPMOS® | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 800V | |
| Current - Continuous Drain (Id) @ 25°C | 190mA (Ta) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Rds On (Max) @ Id, Vgs | 20Ohm @ 190mA, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 1mA | |
| Gate Charge (Qg) (Max) @ Vgs | - | |
| Vgs (Max) | ±20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 230pF @ 25V | |
| FET Feature | - | |
| Power Dissipation (Max) | 1.8W (Ta) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | PG-SOT223-4 | |
| Package / Case | TO-261-4, TO-261AA |
BSP300L6327HUSA1 Documents
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Global Supply Chains - Reliable and Authorized Distributor Resources
| Part Number | Description | Stock |
|
BSP300L6327HUSA1 D# 2156-BSP300L6327HUSA1-ITTR-ND Rochester Electronics LLC |
MOSFET N-CH 800V 190MA SOT223-4 |
Limited Supply - Call |
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| In Stock | 304 - More on Order |
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| Minimum | 1 |
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