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| Part Number | BSS192PL6327HTSA1 |
| OEMstron Part # | BSS192PL6327HTSA1 |
| Manufacturer | Infineon Technologies |
| Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
| Description | MOSFET P-CH 250V 0.19A SOT-89 |
| Lifecycle | Obsolete |
| RoHS | No RoHS Information |
| EDA/CAD Models | BSS192PL6327HTSA1 PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | Feb 18 - Feb 23 (Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Payment |  |
| Shipping |  |
BSS192PL6327HTSA1 Specifications
| Part Number | BSS192PL6327HTSA1 | |
| Brand | Infineon Technologies | |
| Lifecycle | Obsolete | |
| RoHS | No RoHS Information | |
| Product Line | Semiconductors | |
| Category | Transistors | |
| Subcategory | FETs, MOSFETs - Single | |
| Manufacturer | Infineon Technologies | |
| Series | SIPMOS® | |
| FET Type | P-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 250V | |
| Current - Continuous Drain (Id) @ 25°C | 190mA (Ta) | |
| Drive Voltage (Max Rds On, Min Rds On) | 2.8V, 10V | |
| Rds On (Max) @ Id, Vgs | 12Ohm @ 190mA, 10V | |
| Vgs(th) (Max) @ Id | 2V @ 130µA | |
| Gate Charge (Qg) (Max) @ Vgs | 6.1nC @ 10V | |
| Vgs (Max) | ±20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 104pF @ 25V | |
| FET Feature | - | |
| Power Dissipation (Max) | 1W (Ta) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | PG-SOT89 | |
| Package / Case | TO-243AA |
BSS192PL6327HTSA1 Documents
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| Part Number | Description | Stock |
|
BSS192PL6327HTSA1 D# BSS192PL6327HTSA1TR-ND Infineon Technologies AG |
MOSFET P-CH 250V 190MA SOT89 |
Limited Supply - Call |
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| In Stock | 354 - More on Order |
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| Quote Limit | No Limit |
| Lead-Time | To be Confirmed |
| Minimum | 1 |
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