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BSZ086P03NS3EGATMA1

BSZ086P03NS3EGATMA1
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Part Number BSZ086P03NS3EGATMA1
OEMstron Part # BSZ086P03NS3EGATMA1
Manufacturer Infineon Technologies
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET P-CH 30V 40A TSDSON-8
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models BSZ086P03NS3EGATMA1 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Mar 28 - Apr 2 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

BSZ086P03NS3EGATMA1 Specifications

Part Number BSZ086P03NS3EGATMA1
Brand Infineon Technologies
Lifecycle Active
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Infineon Technologies
Series OptiMOS™
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 13.5A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 8.6mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 3.1V @ 105µA
Gate Charge (Qg) (Max) @ Vgs 57.5nC @ 10V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 4785pF @ 15V
FET Feature -
Power Dissipation (Max) 2.1W (Ta), 69W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TSDSON-8
Package / Case 8-PowerTDFN

BSZ086P03NS3EGATMA1 Documents

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