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For Reference Only
| Part Number | CSD25310Q2T |
| OEMstron Part # | CSD25310Q2T |
| Manufacturer | Texas Instruments |
| Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
| Description | 20-V P-CHANNEL NEXFET POWER MOSF |
| Lifecycle | Active |
| RoHS | No RoHS Information |
| EDA/CAD Models | CSD25310Q2T PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | Feb 1 - Feb 6 (Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Payment |  |
| Shipping |  |
CSD25310Q2T Specifications
| Part Number | CSD25310Q2T | |
| Brand | Texas Instruments | |
| Lifecycle | Active | |
| RoHS | No RoHS Information | |
| Product Line | Semiconductors | |
| Category | Transistors | |
| Subcategory | FETs, MOSFETs - Single | |
| Manufacturer | ||
| Series | NexFET™ | |
| FET Type | P-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 20V | |
| Current - Continuous Drain (Id) @ 25°C | 20A (Ta) | |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V | |
| Rds On (Max) @ Id, Vgs | 23.9mOhm @ 5A, 4.5V | |
| Vgs(th) (Max) @ Id | 1.1V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 4.7nC @ 4.5V | |
| Vgs (Max) | ±8V | |
| Input Capacitance (Ciss) (Max) @ Vds | 655pF @ 10V | |
| FET Feature | - | |
| Power Dissipation (Max) | 2.9W (Ta) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | 6-WSON (2x2) | |
| Package / Case | 6-WDFN Exposed Pad |
CSD25310Q2T Documents
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| In Stock | 312 - More on Order |
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| Quote Limit | No Limit |
| Lead-Time | To be Confirmed |
| Minimum | 1 |
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| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1 | $ 1.1034 | $ 1.1034 |
| 100 | $ 1.1034 | $ 110.3400 |
| 500 | $ 1.1034 | $ 551.7000 |
| 1000 | $ 1.1034 | $ 1,103.4000 |
| 2500 | $ 1.1034 | $ 2,758.5000 |
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