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For Reference Only
| Part Number | DF23MR12W1M1B11BOMA1 |
| OEMstron Part # | DF23MR12W1M1B11BOMA1 |
| Manufacturer | Infineon Technologies |
| Category | Semiconductors › Transistors › FETs, MOSFETs - Arrays |
| Description | MOSFET MODULE 1200V 25A |
| Lifecycle | Obsolete |
| RoHS | No RoHS Information |
| EDA/CAD Models | DF23MR12W1M1B11BOMA1 PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | Jan 28 - Feb 2 (Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Payment |  |
| Shipping |  |
DF23MR12W1M1B11BOMA1 Specifications
| Part Number | DF23MR12W1M1B11BOMA1 | |
| Brand | Infineon Technologies | |
| Lifecycle | Obsolete | |
| RoHS | No RoHS Information | |
| Product Line | Semiconductors | |
| Category | Transistors | |
| Subcategory | FETs, MOSFETs - Arrays | |
| Manufacturer | Infineon Technologies | |
| Series | CoolSiC™+ | |
| FET Type | 2 N-Channel (Dual) | |
| FET Feature | Silicon Carbide (SiC) | |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) | |
| Current - Continuous Drain (Id) @ 25°C | 25A | |
| Rds On (Max) @ Id, Vgs | 45mOhm @ 25A, 15V | |
| Vgs(th) (Max) @ Id | 5.5V @ 10mA | |
| Gate Charge (Qg) (Max) @ Vgs | 620nC @ 15V | |
| Input Capacitance (Ciss) (Max) @ Vds | 2000pF @ 800V | |
| Power - Max | 20mW | |
| Operating Temperature | -40°C ~ 150°C (TJ) | |
| Mounting Type | Chassis Mount | |
| Package / Case | Module | |
| Supplier Device Package | Module |
DF23MR12W1M1B11BOMA1 Documents
DF23MR12W1M1B11BOMA1, DF23MR12W1M1B11BOMA1 Datasheet
(Total Pages: 10, Size: 583.63 KB)
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