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For Reference Only
Part Number | DMG4N60SK3-13 |
OEMstron Part # | DMG4N60SK3-13 |
Manufacturer | Diodes Incorporated |
Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
Description | MOSFET BVDSS: 501V 650V TO252 T& |
Lifecycle | Obsolete |
RoHS | No RoHS Information |
EDA/CAD Models | DMG4N60SK3-13 PCB Footprint and Symbol |
Warehouses | USA, Europe, China, Hong Kong SAR |
Estimated Delivery | Feb 23 - Feb 28 (Choose Expedited Shipping) |
Warranty | Up to 1 year [Limited-Warranty]* |
Payment | ![]() |
Shipping | ![]() |
DMG4N60SK3-13 Specifications
Part Number | DMG4N60SK3-13 | |
Brand | Diodes Incorporated | |
Lifecycle | Obsolete | |
RoHS | No RoHS Information | |
Product Line | Semiconductors | |
Category | Transistors | |
Subcategory | FETs, MOSFETs - Single | |
Manufacturer | Diodes Incorporated | |
Series | - | |
FET Type | N-Channel | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | 600V | |
Current - Continuous Drain (Id) @ 25°C | 3.7A (Tc) | |
Drive Voltage (Max Rds On, Min Rds On) | 10V | |
Rds On (Max) @ Id, Vgs | 2.3Ohm @ 2A, 10V | |
Vgs(th) (Max) @ Id | 4.5V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 14.3nC @ 10V | |
Vgs (Max) | ±30V | |
Input Capacitance (Ciss) (Max) @ Vds | 532pF @ 25V | |
FET Feature | - | |
Power Dissipation (Max) | 48W (Ta) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Supplier Device Package | TO-252 | |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
DMG4N60SK3-13 Documents
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Global Supply Chains - Reliable and Authorized Distributor Resources
Part Number | Description | Stock |
DMG4N60SK3-13 D# DMG4N60SK3-13DITR-ND Diodes Incorporated |
MOSFET N-CH 600V 3.7A TO252 T&R |
Limited Supply - Call |
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