Semiconductors
Passive Components
Sensors
Power
Optoelectronics
For Reference Only
| Part Number | EPC2012 |
| OEMstron Part # | EPC2012 |
| Manufacturer | EPC |
| Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
| Description | GANFET TRANS 200V 3A BUMPED DIE |
| Lifecycle | Discontinued |
| RoHS | No RoHS Information |
| EDA/CAD Models | EPC2012 PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | Feb 24 - Mar 1 (Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Payment |  |
| Shipping |  |
EPC2012 Specifications
| Part Number | EPC2012 | |
| Brand | EPC | |
| Lifecycle | Discontinued | |
| RoHS | No RoHS Information | |
| Product Line | Semiconductors | |
| Category | Transistors | |
| Subcategory | FETs, MOSFETs - Single | |
| Manufacturer | EPC | |
| Series | eGaN® | |
| FET Type | N-Channel | |
| Technology | GaNFET (Gallium Nitride) | |
| Drain to Source Voltage (Vdss) | 200V | |
| Current - Continuous Drain (Id) @ 25°C | 3A (Ta) | |
| Drive Voltage (Max Rds On, Min Rds On) | 5V | |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 3A, 5V | |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA | |
| Gate Charge (Qg) (Max) @ Vgs | 1.8nC @ 5V | |
| Vgs (Max) | +6V, -5V | |
| Input Capacitance (Ciss) (Max) @ Vds | 145pF @ 100V | |
| FET Feature | - | |
| Power Dissipation (Max) | - | |
| Operating Temperature | -40°C ~ 125°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | Die | |
| Package / Case | Die |
EPC2012 Documents
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Global Supply Chains - Reliable and Authorized Distributor Resources
| Part Number | Description | Stock |
|
EPC2012 Efficient Power Conversion |
1755 |
| Part Number | Description | Stock |
|
EPC2012 Efficient Power Conversion |
TRANS GAN 200V 3A BUMPED DIE |
10000 |
| Part Number | Description | Stock |
|
EPC9004C D# 917-1092-ND Efficient Power Conversion |
BOARD DEV FOR EPC2012C 200V EGAN |
11 In Stock |
|
EPC2012C D# 917-1084-2-ND Efficient Power Conversion |
GANFET N-CH 200V 5A DIE OUTLINE |
24551 In Stock |
|
EPC2012 D# 917-1017-2-ND Efficient Power Conversion |
GANFET N-CH 200V 3A DIE |
Limited Supply - Call |
|
EPC9004 D# 917-1013-ND Efficient Power Conversion |
BOARD DEV FOR EPC2012 200V EGAN |
Temporarily Out of Stock |
|
EPC9052 D# 917-1115-ND Efficient Power Conversion |
BOARD DEV EPC2012C EGAN FET |
15 In Stock |
| Part Number | Description | Stock |
|
EPC2012C Efficient Power Conversion |
OEM/CM QUOTES ONLY | NO BROKERS |
20125 |
|
EPC2012 Efficient Power Conversion |
OEM/CM QUOTES ONLY | NO BROKERS |
2018 |
| Part Number | Description | Stock |
|
EPC2012 D# NS-EPC2012 EPC |
OEM/CM ONLY |
4073 |
| Part Number | Description | Stock |
|
EPC2012 Efficient Power Conversion |
POWER FIELD-EFFECT TRANSISTOR, 3A I(D), 200V, 0.1OHM, 1-ELEMENT, N-CHANNEL, GALLIUM NITRIDE, METAL-OXIDE SEMICONDUCTOR FET |
155 |
| Part Number | Description | Stock |
|
EPC2012C EFFICIENT-POWER-CONVERSION-CORPORATION |
OEM/CM ONLY |
20095 |
|
EPC2012 Efficient Power Conversion |
OEM/CM ONLY |
3685 |
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Quick Inquiry
| In Stock | 392 - More on Order |
|---|---|
| Quote Limit | No Limit |
| Lead-Time | To be Confirmed |
| Minimum | 1 |
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